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Title:
GETTERING AGENTS IN MEMORY CHARGE STORAGE STRUCTURES
Document Type and Number:
WIPO Patent Application WO/2012/054444
Kind Code:
A3
Abstract:
Memory cells including a charge storage structure having a gettering agent therein can be useful for non-volatile memory devices. Providing for gettering of oxygen from a charge-storage material of the charge storage structure can facilitate a mitigation of detrimental oxidation of the charge-storage material.

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Inventors:
BREWER RHETT T (US)
RAMASWAMY DURAI V (US)
Application Number:
PCT/US2011/056658
Publication Date:
June 28, 2012
Filing Date:
October 18, 2011
Export Citation:
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Assignee:
MICRON TECHNOLOGY INC (US)
BREWER RHETT T (US)
RAMASWAMY DURAI V (US)
International Classes:
H01L27/115; H01L21/8247
Foreign References:
KR100816727B12008-03-27
US20090008702A12009-01-08
KR100877100B12009-01-09
US20050003212A12005-01-06
Other References:
See also references of EP 2633556A4
Attorney, Agent or Firm:
LEFFERT, Thomas W. (P.A.P.O. Box 223, Minneapolis Minnesota, US)
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