Title:
GRAPHENE FIELD-EFFECT TRANSISTOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/214119
Kind Code:
A1
Abstract:
Provided are a graphene field-effect transistor and a preparation method therefor, belonging to the field of field-effect transistors. The transistor comprises: a substrate (1), a graphene channel layer (2) formed on a substrate gate, a source electrode (3) and a drain electrode (4) respectively located at two ends of the graphene channel layer (2), and a gate dielectric layer (5) and a gate electrode (6) located on the graphene channel layer (2) between the source electrode (3) and the drain electrode (4), wherein the substrate (1) has a support member composed of two or more recess portions (101) and one or more projection portions (102), and at least one projection portion (102) of the support member comes into contact with the graphene channel layer (2). The graphene channel layer (2) is physically supported by means of the support member on the substrate (1), thus preventing the collapse or deformation of the graphene channel layer (2) due to the action of gravity, etc., in the case of hanging same in the air without support, and reducing the contact area between the substrate (1) and the graphene channel layer (2), reducing the influence of the substrate (1) on the graphene channel layer (2), and increasing the carrier mobility.
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Inventors:
LIANG CHEN (CN)
QIN XUDONG (CN)
ZHANG CHEN-XIONG (CN)
QIN XUDONG (CN)
ZHANG CHEN-XIONG (CN)
Application Number:
PCT/CN2017/085988
Publication Date:
November 29, 2018
Filing Date:
May 25, 2017
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/78; H01L21/04; H01L21/336
Foreign References:
| CN103377887A | 2013-10-30 | |||
| CN104966663A | 2015-10-07 | |||
| CN105914158A | 2016-08-31 | |||
| JP2016127238A | 2016-07-11 | |||
| US20100258787A1 | 2010-10-14 |
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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