Title:
GRAPHENE FILM, COMPOSITE BODY, METHOD FOR MANUFACTURING SAME, AND SINGLE-CRYSTAL SAPPHIRE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2017/034018
Kind Code:
A1
Abstract:
[Problem] To provide a high-quality graphene film in which the number of layers is controlled, and a sapphire substrate that is optimal for obtaining the graphene film. To clarify the characteristics of the sapphire substrate for growing the graphene film that are optimal for achieving a high-quality graphene film and for enabling control of the number of layers. [Solution] The inclination angle between the actual surface of the sapphire substrate for growing the graphene and the crystal lattice surface is set to greater than 0°, whereby a high-quality graphene film in which the number of layers is controlled can be obtained. A composite body is obtained having a single-crystal sapphire substrate for which the off angle is greater than 0°, a metal film epitaxially grown on the sapphire substrate, and a graphene film epitaxially grown on the metal film.
Inventors:
AOTA NATSUKO (JP)
AIDA HIDEO (JP)
TACHIBANA MASARU (JP)
MORISAKO SHIYO (JP)
AIDA HIDEO (JP)
TACHIBANA MASARU (JP)
MORISAKO SHIYO (JP)
Application Number:
PCT/JP2016/074943
Publication Date:
March 02, 2017
Filing Date:
August 26, 2016
Export Citation:
Assignee:
NAMIKI PRECISION JEWEL CO LTD (JP)
PUBLIC UNIV CORP YOKOHAMA CITY UNIV (JP)
PUBLIC UNIV CORP YOKOHAMA CITY UNIV (JP)
International Classes:
B32B9/00
Domestic Patent References:
| WO2011105530A1 | 2011-09-01 | |||
| WO2016175195A1 | 2016-11-03 |
Foreign References:
| JP2013177273A | 2013-09-09 | |||
| JP2013180930A | 2013-09-12 | |||
| JP2007181007A | 2007-07-12 | |||
| JP2014207328A | 2014-10-30 | |||
| JP2013035733A | 2013-02-21 | |||
| JP2009062247A | 2009-03-26 |
Other References:
WANG, GANG ET AL.: "Lattice Selective Growth of Graphene on Sapphire Substrate", THE JOURNAL OF PHYSICAL CHEMISTRY C, vol. 119, no. 1, pages 426 - 430, XP055366296, ISSN: 1932-7447
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