GRAPHENE AND METHOD FOR PREPARING SAME

WIPO Patent Application WO/2019/017693

A1

The present invention relates to a method for preparing graphene comprising the steps of: forming a dielectric body; and producing graphene by means of heat treating while adding a gaseous carbon source on the dielectric body.

SONG YOUNG JAE (KR)
SHIN BONG GYU (KR)
PARK SANG WOO (KR)
BOO DAE HWAN (KR)

PCT/KR2018/008127

January 24, 2019

July 18, 2018

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RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV (KR)

C30B29/36; C01B32/184; C01B32/194; C30B29/06; C30B29/68; C30B33/02

KR20150047048A	2015-05-04
KR20130006869A	2013-01-18

MASUDA, Y. ET AL.: "Formation of a New Nitride Interface in Epitaxial Graphene on SiC (0001)", PHYS. REV. B, vol. 91, no. 7, 20 February 2015 (2015-02-20), pages 075421-1 - 075421-6, XP055565764, Retrieved from the Internet
VELEZ-FORT, E. ET AL.: "Towards Single Step Fabrication ofN-doped Graphene/Si3N4/ SiC Heterostructures", NANO RESEARCH, vol. 7, no. 6, 8 May 2014 (2014-05-08), pages 835 - 843, XP055565771, ISSN: 1998-0124, Retrieved from the Internet
HANSIKA, I. S. ET AL.: "Buffer-eliminated, Charge-neutral Epitaxial Graphene on Oxidized 4H-SiC (0001) Surface", JOURNAL OF APPLIED PHYSICS, vol. 119, 3 June 2016 (2016-06-03), pages 215305, XP012208205, Retrieved from the Internet

HAHN, Sun Hee (KR)

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