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Title:
GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER AND FUNCTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2016/093033
Kind Code:
A1
Abstract:
A high carrier concentration region 9 having a carrier concentration of 1 × 1018/cm3 or more and a low carrier concentration region 10 having a carrier concentration of 9 × 1017/cm3 or less are present in a cross-section that is perpendicular to the main surfaces 3a, 3b of a crystal layer 3. The low carrier concentration region 10 has a long and thin shape, and has a meeting part 11. The low carrier concentration region 10 continuously extends between a pair of the main surfaces 3a, 3b.

Inventors:
IWAI MAKOTO (JP)
YOSHINO TAKASHI (JP)
Application Number:
PCT/JP2015/082614
Publication Date:
June 16, 2016
Filing Date:
November 19, 2015
Export Citation:
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Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/38; C23C16/34; C30B19/10; C30B25/16
Foreign References:
JP2006117530A2006-05-11
JP2008060519A2008-03-13
Attorney, Agent or Firm:
HOSODA Masutoshi et al. (JP)
Masunori Hosoda (JP)
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