Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
GROUP 13 ELEMENT NITRIDE FILM AND LAMINATE THEREOF
Document Type and Number:
WIPO Patent Application WO/2013/022122
Kind Code:
A1
Abstract:
A group 13 element nitride film (3) is grown on a seed crystal substrate (11) in a nitrogen-containing atmosphere from a melt containing a flux and a group 13 element by a flux method. The group 13 element nitride film (3) includes an inclusion-distributed layer (3a), in which an inclusion derived from the components of the melt is distributed, is disposed in a region 50 μm or less from an interface (11a) on the seed crystal semiconductor side (11), and an inclusion-deficient layer (3b), which is deficient in inclusion, is disposed on the inclusion-distributed layer (3a).

Inventors:
IWAI, Makoto (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
岩井 真 (〒30 愛知県名古屋市瑞穂区須田町2番56号日本碍子株式会社内 Aichi, 〒4678530, JP)
HIRAO, Takayuki (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
Application Number:
JP2012/070778
Publication Date:
February 14, 2013
Filing Date:
August 09, 2012
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NGK Insulators, Ltd. (2-56, Suda-cho Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
日本碍子株式会社 (〒30 愛知県名古屋市瑞穂区須田町2番56号 Aichi, 〒4678530, JP)
IWAI, Makoto (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 〒4678530, JP)
岩井 真 (〒30 愛知県名古屋市瑞穂区須田町2番56号日本碍子株式会社内 Aichi, 〒4678530, JP)
International Classes:
C30B29/38; C30B19/02; H01L21/208; H01L33/32
Domestic Patent References:
WO2010092736A1
Foreign References:
JP2006008416A
JP2005306709A
JP2011105586A
JP2009507364A
JP2011207677A
Attorney, Agent or Firm:
HOSODA, Masutoshi et al. (Jowa Takanawa BLDG. 7F 5-4, Takanawa 1-chome Minato-k, Tokyo 74, 〒1080074, JP)
Download PDF:
Claims: