Title:
GROUP 13 ELEMENT NITRIDE FILM AND LAMINATE THEREOF
Document Type and Number:
WIPO Patent Application WO/2013/022122
Kind Code:
A1
Abstract:
A group 13 element nitride film (3) is grown on a seed crystal substrate (11) in a nitrogen-containing atmosphere from a melt containing a flux and a group 13 element by a flux method. The group 13 element nitride film (3) includes an inclusion-distributed layer (3a), in which an inclusion derived from the components of the melt is distributed, is disposed in a region 50 μm or less from an interface (11a) on the seed crystal semiconductor side (11), and an inclusion-deficient layer (3b), which is deficient in inclusion, is disposed on the inclusion-distributed layer (3a).
Inventors:
IWAI MAKOTO (JP)
HIRAO TAKAYUKI (JP)
YOSHINO TAKASHI (JP)
HIRAO TAKAYUKI (JP)
YOSHINO TAKASHI (JP)
Application Number:
PCT/JP2012/070778
Publication Date:
February 14, 2013
Filing Date:
August 09, 2012
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
IWAI MAKOTO (JP)
HIRAO TAKAYUKI (JP)
YOSHINO TAKASHI (JP)
IWAI MAKOTO (JP)
HIRAO TAKAYUKI (JP)
YOSHINO TAKASHI (JP)
International Classes:
C30B29/38; C30B19/02; H01L21/208; H01L33/32
Domestic Patent References:
| WO2010092736A1 | 2010-08-19 |
Foreign References:
| JP2006008416A | 2006-01-12 | |||
| JP2005306709A | 2005-11-04 | |||
| JP2011105586A | 2011-06-02 | |||
| JP2009507364A | 2009-02-19 | |||
| JP2011207677A | 2011-10-20 |
Attorney, Agent or Firm:
HOSODA, Masutoshi et al. (JP)
Masunori Hosoda (JP)
Masunori Hosoda (JP)
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Claims:
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