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Title:
GROUP II-III-V-VI QUANTUM DOTS, PREPARATION METHOD THEREFOR AND QUANTUM DOT OPTOELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/216265
Kind Code:
A1
Abstract:
Disclosed by the present invention are group II-III-V-VI quantum dots, a preparation method therefor and a quantum dot optoelectronic device. The method for preparing group II-III-V-VI quantum dots comprises the following steps: S1, providing a first solution containing a group III-V quantum dot core, or providing a second solution containing a group II-III-V quantum dot core; S2, adding a second supplementing liquid to the first solution, or adding a first supplementing liquid to the second solution, and obtaining a group II-III-V-VI quantum dot core after reaction. A first mixed liquid comprising a first group III element precursor, a first group V element precursor and a solvent reacts at 40-100°C, and then a first group VI element precursor is added to continue the reaction, thereby obtaining the first supplementing liquid; and a second mixed solution comprising a first group II element precursor, a first group III element precursor, a first group V element precursor and a solvent reacts at 40-100°C, and then a first group VI element precursor is added to continue the reaction, thereby obtaining the second supplementing liquid. The group II-III-V-VI quantum dots prepared by the present invention have high uniformity, few lattice defects, and excellent optical performance.

Inventors:
QIAO PEISHENG (CN)
WANG JUN (CN)
YU WENHUA (CN)
Application Number:
PCT/CN2020/086244
Publication Date:
October 29, 2020
Filing Date:
April 23, 2020
Export Citation:
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Assignee:
NAJING TECH CORP LTD (CN)
International Classes:
C09K11/02; B82Y20/00; B82Y30/00; B82Y40/00; C09K11/70; C09K11/88; H01L31/0352; H01L33/04; H01L51/50
Domestic Patent References:
WO2018146120A12018-08-16
WO2018215396A12018-11-29
Foreign References:
CN106479482A2017-03-08
CN105051153A2015-11-11
CN106701059A2017-05-24
CN102199425A2011-09-28
CN101765649A2010-06-30
CN105992807A2016-10-05
US20140322901A12014-10-30
CN109439327A2019-03-08
KR101768998B12017-08-16
Other References:
HUANG, LU ET AL.: "Synthesis of InPZnS/ZnS Quantum Dots by Continuous Injection of Phosphorus Precursor", ACTA CHIMICA SINICA, vol. 75, no. 3, 31 March 2017 (2017-03-31), ISSN: 0567-7351, DOI: 20200621171430X
KIM TAEHOON ET AL.: "Large-Scale Synthesis of InPZnS Alloy Quantum Dots with Dodecanethiol as a Composition Controller", THE JOURNAL OF PHYSICAL CHEMISTRY LETTERS, vol. 3, no. 2, 26 December 2011 (2011-12-26), XP055746878, ISSN: 1948-7185, DOI: 20200621172114
ALTINTAS YEMLIHA ET AL.: "The Effect of Ligand Chain Length on The Optical Properties of Alloyed Core-Shell InPZnS/ZnS Quantum Dots", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 711, 29 March 2017 (2017-03-29), XP029988129, ISSN: 1873-4669, DOI: 20200621173116
ALTINTAS YEMLIHA ET AL.: "Highly Efficient Cd-Free Alloyed Core/Shell Quantum Dots with Optimized Precursor Concentrations", THE JOURNAL OF PHYSICAL CHEMISTRY C, vol. 120, no. 14, 17 March 2016 (2016-03-17), XP055746874, ISSN: 1932-7447, DOI: 20200621173833A
Attorney, Agent or Firm:
KANGXIN PARTNERS, P.C. (CN)
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