Title:
GROUP III-NITRIDE COMPOSITE SUBSTRATE AND METHOD OF PRODUCING SAME, LAYERED GROUP III-NITRIDE COMPOSITE SUBSTRATE, AS WELL AS GROUP III-NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2014/125688
Kind Code:
A1
Abstract:
A group III-nitride composite substrate (1) is a group III-nitride composite substrate (1) which is of diameter greater than or equal to 75 mm, in which a supporting substrate (11), and a group III-nitride film (13) which is of thickness greater than or equal to 50 nm and less than or equal to 10 μm, are set to adhere together, wherein: a ratio st/mt, which is of a standard deviation st of thickness with respect to the average value mt of thickness of the group III-nitride film (13), is greater than or equal to 0.01 and less than or equal to 0.5; and a ratio s0/m0, which is of a standard deviation s0 of an absolute value of an off-axis with respect to the average value m0 of absolute values of an off-axis with respect to a predetermined surface orientation surface of a main surface (13m) of the group III-nitride film (13), is greater than or equal to 0.005 and less than or equal to 0.6. As a result, provided is a group III-nitride composite substrate having a group III-nitride film which is of low cost, having a large aperture, thin film-thickness, low distribution of film-thickness, and high crystal quality, and a method of producing the same. Also provided is a layered group III-nitride composite substrate, a group III-nitride semiconductor device, and a method of producing the same.
Inventors:
ISHIBASHI KEIJI (JP)
YANAGISAWA TAKUYA (JP)
UEMATSU KOJI (JP)
SEKI YUKI (JP)
YAMAMOTO YOSHIYUKI (JP)
YANAGISAWA TAKUYA (JP)
UEMATSU KOJI (JP)
SEKI YUKI (JP)
YAMAMOTO YOSHIYUKI (JP)
Application Number:
PCT/JP2013/080550
Publication Date:
August 21, 2014
Filing Date:
November 12, 2013
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/02; H01L33/32
Domestic Patent References:
| WO2011093481A1 | 2011-08-04 |
Foreign References:
| JP2012230969A | 2012-11-22 | |||
| JP2010269970A | 2010-12-02 | |||
| JP2008303138A | 2008-12-18 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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