Title:
GROUP III NITRIDE LAMINATE AND LIGHT EMITTING ELEMENT COMPRISING SAID LAMINATE
Document Type and Number:
WIPO Patent Application WO/2016/143653
Kind Code:
A1
Abstract:
[Problem] To provide a group III nitride laminate which comprises a multilayer structure wherein a GaN layer is laminated on an AlXGa1-XN layer (0 < X ≤ 1) that is lattice-matched to an AlN single crystal substrate, and wherein the GaN layer has high crystal quality (good crystallinity and low dislocation density) and good smoothness. [Solution] A group III nitride laminate which comprises, on an AlN single crystal substrate, a multilayer structure having an AlXGa1-XN layer (0 < X ≤ 1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5 × 1010 cm-2 or a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlXGa1-XN layer (0 < X ≤ 1).
Inventors:
FURUYA HIROSHI (JP)
OBATA TOSHIYUKI (JP)
KINOSHITA TORU (JP)
OBATA TOSHIYUKI (JP)
KINOSHITA TORU (JP)
Application Number:
PCT/JP2016/056551
Publication Date:
September 15, 2016
Filing Date:
March 03, 2016
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
H01L33/16; H01L33/12; H01L33/32
Foreign References:
| JP2010517298A | 2010-05-20 | |||
| JP2007184353A | 2007-07-19 | |||
| JP2006295132A | 2006-10-26 | |||
| JP2014241397A | 2014-12-25 | |||
| JP2010263140A | 2010-11-18 | |||
| US20140209923A1 | 2014-07-31 |
Other References:
See also references of EP 3267497A4
Attorney, Agent or Firm:
MAEDA & SUZUKI (JP)
Maeda and a Suzuki international patent business corporation (JP)
Maeda and a Suzuki international patent business corporation (JP)
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