GROUP III NITRIDE LIGHT EMITTING DEVICES WITH GALLIUM-FREE LAYERS

Title:

GROUP III NITRIDE LIGHT EMITTING DEVICES WITH GALLIUM-FREE LAYERS

Document Type and Number:

WIPO Patent Application WO2002037579

Kind Code:

A3

Abstract:

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

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Inventors:

EDMOND JOHN ADAM (US)
DOVERSPIKE KATHLEEN MARIE (US)
KONG HUA-SHUANG (US)
BERGMANN MICHAEL JOHN (US)

Application Number:

PCT/US2001/045636

Publication Date:

July 18, 2002

Filing Date:

November 02, 2001

Export Citation:

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Assignee:

CREE INC (US)
EDMOND JOHN ADAM (US)
DOVERSPIKE KATHLEEN MARIE (US)
KONG HUA-SHUANG (US)
BERGMANN MICHAEL JOHN (US)

International Classes:

H01L33/00; H01L33/32; H01S5/323; H01S5/343; (IPC1-7): H01L33/00

Domestic Patent References:

WO1999018617A1

1999-04-15

Foreign References:

US5523589A	1996-06-04
US5900647A	1999-05-04
US6046464A	2000-04-04
GB2343294A	2000-05-03
EP0817283A1	1998-01-07

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