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Title:
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, PRODUCTION METHOD THEREOF AND GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO2003068699
Kind Code:
A8
Abstract:
A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III of 0 to 1,000 to form and grow a Group III nitride semiconductor on a heated substrate and a second step of vapor-phase-growing a Group III nitride semiconductor crystal on the substrate using a Group III raw material and a nitrogen raw material.

Inventors:
MIKI HISAYUKI (JP)
SAKURAI TETSUO (JP)
OKUYAMA MINEO (JP)
Application Number:
JP0301558W
Publication Date:
November 13, 2003
Filing Date:
February 14, 2003
Export Citation:
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Assignee:
SHOWA DENKO K.K.
MIKI, HISAYUKI
SAKURAI, TETSUO
OKUYAMA, MINEO
International Classes:
C30B29/38; C23C16/34; C30B23/00; C30B25/00; C30B25/02; C30B25/14; C30B28/12; C30B28/14; H01L21/20; H01L21/205; H01L21/76; H01L33/00; H01L33/12; H01L33/32; H01S5/323; H01S5/343; H01L33/38; H01L33/42; (IPC1-7): H01L21/205; C30B29/38
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