Title:
GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR PREPARING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2011/040487
Kind Code:
A1
Abstract:
Disclosed is a group III nitride semiconductor laser element that is provided with a high tolerance to COD. The group III nitride semiconductor laser element (11) is provided with a laser waveguide that extends in the direction of the intersecting line of the m-n plane and a semipolar surface (17a). First and second end surfaces (26, 28), which form a laser resonator, are disposed on both ends of the laser waveguide. The first and second end surfaces (26, 28) intersect the m-n plane (or the a-n plane). A c+ axis vector forms an acute angle with a waveguide vector (WV). The waveguide vector (WV) corresponds to the direction from the second end surface (28) to the first end surface (26). The thickness of a first multilayer dielectric film (43a) on the first end surface (C+ side) (26) is thinner than the thickness of a second multilayer dielectric film (43b) on the second end surface (C- side) (28).
Inventors:
YOSHIZUMI YUSUKE (JP)
ENYA YOHEI (JP)
KYONO TAKASHI (JP)
ADACHI MASAHIRO (JP)
TOKUYAMA SHINJI (JP)
SUMITOMO TAKAMICHI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
KATAYAMA KOJI (JP)
NAKAMURA TAKAO (JP)
ENYA YOHEI (JP)
KYONO TAKASHI (JP)
ADACHI MASAHIRO (JP)
TOKUYAMA SHINJI (JP)
SUMITOMO TAKAMICHI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
KATAYAMA KOJI (JP)
NAKAMURA TAKAO (JP)
Application Number:
PCT/JP2010/066986
Publication Date:
April 07, 2011
Filing Date:
September 29, 2010
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
YOSHIZUMI YUSUKE (JP)
ENYA YOHEI (JP)
KYONO TAKASHI (JP)
ADACHI MASAHIRO (JP)
TOKUYAMA SHINJI (JP)
SUMITOMO TAKAMICHI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
KATAYAMA KOJI (JP)
NAKAMURA TAKAO (JP)
YOSHIZUMI YUSUKE (JP)
ENYA YOHEI (JP)
KYONO TAKASHI (JP)
ADACHI MASAHIRO (JP)
TOKUYAMA SHINJI (JP)
SUMITOMO TAKAMICHI (JP)
UENO MASAKI (JP)
IKEGAMI TAKATOSHI (JP)
KATAYAMA KOJI (JP)
NAKAMURA TAKAO (JP)
International Classes:
H01S5/343
Foreign References:
| JP2008187044A | 2008-08-14 | |||
| JP2009081428A | 2009-04-16 |
Other References:
HIROKUNI ASAMIZU ET AL.: "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (11-22) Plane Gallium Nitrides", APPLIED PHYSICS EXPRESS, vol. 2, 13 February 2009 (2009-02-13), pages 021002, XP008155359
ANURAG TYAGI ET AL.: "Semipolar (10-1-1) InGaN/GaN Laser Diodes on Bulk GaN Substrates", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 46, no. 19, 2007, pages L444 - L445, XP008155360
APPLIED PHYSICS LETTERS, vol. 94, 2009, pages 071105
APPLIED PHYSICS EXPRESS, vol. 2, 2009, pages 082102
See also references of EP 2487765A4
ANURAG TYAGI ET AL.: "Semipolar (10-1-1) InGaN/GaN Laser Diodes on Bulk GaN Substrates", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 46, no. 19, 2007, pages L444 - L445, XP008155360
APPLIED PHYSICS LETTERS, vol. 94, 2009, pages 071105
APPLIED PHYSICS EXPRESS, vol. 2, 2009, pages 082102
See also references of EP 2487765A4
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)
Yoshiki Hasegawa (JP)
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