GROUP III NITRIDE SEMICONDUCTOR OPTICAL ELEMENT AND MANUFACTURING METHOD THEREOF

Title:

GROUP III NITRIDE SEMICONDUCTOR OPTICAL ELEMENT AND MANUFACTURING METHOD THEREOF

Document Type and Number:

WIPO Patent Application WO/2005/124950

Kind Code:

A1

Abstract:

A group III nitride semiconductor optical element provided with a current constriction layer inside has improved adhesiveness of an upper electrode and provides an effective structure for reducing element resistance. For instance, in an inner stripe type group III nitride semiconductor laser, on an n-type GaN substrate (102), an Si-doped n-type GaN layer (103), an n-type clad layer (104), an n-type light confinement layer (105), a multiquantum well layer (106) having three well layers, a cap layer (107), and a p-type GaN guide layer (108) are stacked. Then, on such layers, the low-temperature grown AlN current constriction layer (109), a p-type clad layer (110) composed of Mg-doped p-type Al_0.1Ga_0.9N, and a contact layer (111) composed of Mg-doped p-type GaN are stacked. On an upper plane of a contact layer (111) on an upper part of the current constriction layer (109), an unevenness having a mean square roughness of approximately 150nm is formed, and a p-type electrode (112) is provided thereon. A p-type clad layer (110) and a contact layer (111) are formed at a growing temperature of approximately 980°C, and the unevenness is formed during the growing process.

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Inventors:

KIMURA AKITAKA (JP)

Application Number:

PCT/JP2005/011130

Publication Date:

December 29, 2005

Filing Date:

June 17, 2005

Export Citation:

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Assignee:

NEC CORP (JP)
KIMURA AKITAKA (JP)

International Classes:

H01S5/042; H01S5/343; (IPC1-7): H01S5/042; H01S5/343

Foreign References:

JPH10215034A	1998-08-11
JP2003078215A	2003-03-14
JP2001015860A	2001-01-19
JP2003347238A	2003-12-05

Attorney, Agent or Firm:

Miyazaki, Teruo (16th Kowa Bldg. 9-20, Akasaka 1-chom, Minato-ku Tokyo, JP)

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