Title:
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2022/079939
Kind Code:
A1
Abstract:
Provided is a group III nitride semiconductor substrate provided with a first surface and a second surface, wherein discrepancies in device properties, between devices within the same substrate, are suppressed even if the size of a device fabricated on the first surface becomes large. The group III nitride semiconductor substrate of the present invention is provided with a first surface and a second surface and satisfies at least one condition selected from the group consisting of items (1)-(3). (1) The maximum height Wz of surface waviness curve of the first surface is 150 nm or less. (2) The root mean square height Wq of surface waviness curve of the first surface is 25 nm or less. (3) The average length of surface waviness curve elements WSm of the first surface is 0.5 mm or more.
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Inventors:
SAKAI MASAHIRO (JP)
OUE SHOHEI (JP)
OUE SHOHEI (JP)
Application Number:
PCT/JP2021/020278
Publication Date:
April 21, 2022
Filing Date:
May 27, 2021
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C23C16/34; C30B29/38; C30B19/04; H01L21/205
Domestic Patent References:
| WO2014156914A1 | 2014-10-02 |
Foreign References:
| JP2011236078A | 2011-11-24 |
Attorney, Agent or Firm:
MOMII Takafumi (JP)
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