Title:
GROUP III-V DEVICES WITH DELTA-DOPED LAYER UNDER CHANNEL REGION
Document Type and Number:
WIPO Patent Application WO/2010/074906
Kind Code:
A3
Abstract:
A group III-V material device has a delta-doped region below a channel region. This may improve the performance of the device by reducing the distance between the gate and the channel region.
Inventors:
HUDAIT MANTU K (US)
TOLCHINSKY PETER G (US)
CHAU ROBERT S (US)
RADOSAVLJEVIC MARKO (US)
PILLARISETTY RAVI (US)
BUDREVICH AARON A (US)
TOLCHINSKY PETER G (US)
CHAU ROBERT S (US)
RADOSAVLJEVIC MARKO (US)
PILLARISETTY RAVI (US)
BUDREVICH AARON A (US)
Application Number:
PCT/US2009/066432
Publication Date:
September 16, 2010
Filing Date:
December 02, 2009
Export Citation:
Assignee:
INTEL CORP (US)
HUDAIT MANTU K (US)
TOLCHINSKY PETER G (US)
CHAU ROBERT S (US)
RADOSAVLJEVIC MARKO (US)
PILLARISETTY RAVI (US)
BUDREVICH AARON A (US)
HUDAIT MANTU K (US)
TOLCHINSKY PETER G (US)
CHAU ROBERT S (US)
RADOSAVLJEVIC MARKO (US)
PILLARISETTY RAVI (US)
BUDREVICH AARON A (US)
International Classes:
H01L29/78
Foreign References:
| US20080142786A1 | 2008-06-19 |
Other References:
W.Z. ZHOU ET AL.: "Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single qua ntum well", SOLID STATE COMMUNICATIONS, vol. 142, no. ISS.7, May 2007 (2007-05-01), pages 393 - 397, XP022048144
See also references of EP 2359405A4
See also references of EP 2359405A4
Attorney, Agent or Firm:
VINCENT, Lester J. et al. (1279 Oakmead ParkwaySunnyvale, California, US)
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