GROUP IIIA NITRIDE GROWTH SYSTEM AND METHOD

WIPO Patent Application WO/2017/205815

A3

A system and method for growing a gallium nitride (GaN) structure that includes providing a template; and growing at least a first GaN layer on the template using a first sputtering process, wherein the first sputtering process includes: controlling a temperature of a sputtering target, and modulating between a gallium-rich condition and a gallium-lean condition, wherein the gallium-rich condition includes a gallium-to-nitrogen ratio having a first value that is greater than 1, and wherein the gallium-lean condition includes the gallium-to-nitrogen ratio having a second value that is less than the first value. Some embodiments include a load lock configured to load a substrate wafer into the system and remove the GaN structure from the system; and a plurality of deposition chambers, wherein the plurality of deposition chambers includes a GaN-deposition chamber configured to grow at least the first GaN layer on a template that includes the substrate wafer.

JORGENSON ROBBIE (US)
DABIRAN AMIR (US)
ROTHWELL SARA (US)

PCT/US2017/034810

December 21, 2017

May 26, 2017

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JORGENSON ROBBIE (US)
DABIRAN AMIR (US)
ROTHWELL SARA (US)

C30B29/40; H01L29/20

US6830949B2	2004-12-14
US8168460B2	2012-05-01
US20130056777A1	2013-03-07
US20030235934A1	2003-12-25
US20120199952A1	2012-08-09
US20030183835A1	2003-10-02
US20130285065A1	2013-10-31
US20140008660A1	2014-01-09
US20150014697A1	2015-01-15
US20090289270A1	2009-11-26

PEEPLES JOHN: "Vapor Compression Cooling for High Performance Applications", SEMICONDUCTOR, vol. 7, no. 3, 1 August 2011 (2011-08-01), pages 1 - 11, XP055586814, Retrieved from the Internet [retrieved on 20171011]

RIXEN, Jonathan et al. (US)

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