Title:
GROWTH APPARATUS FOR SILICON CARBIDE SINGLE CRYSTAL INGOT, AND GROWTH METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2017/209376
Kind Code:
A3
Abstract:
Disclosed are a growth apparatus for a silicon carbide (SiC) single crystal ingot and a growth method therefor, capable of increasing a growth length by moving a crucible position inside a resistance heating heater to maintain a temperature gradient. A source comprising SiC powder is filled into the lower portion of the growth apparatus for the SiC single crystal ingot, and a SiC single crystal seed is mounted at the upper portion of the growth apparatus whereby a temperature falling degree increases from the bottom of a crucible to a predetermined height or more. The resistance heating heater for heating the crucible is installed on the outer circumference of the growth apparatus spaced apart from the crucible. The growth apparatus raises the crucible so as to compensate for a temperature gradient reduction inside the crucible in conjunction with the growth of the SiC single crystal ingot by a crucible moving system.
Inventors:
LEE HEE CHOON (KR)
CHOI YI SIK (KR)
KIM TAE HEE (KR)
CHOI YI SIK (KR)
KIM TAE HEE (KR)
Application Number:
PCT/KR2017/001939
Publication Date:
September 07, 2018
Filing Date:
February 22, 2017
Export Citation:
Assignee:
SAPPHIRE TECH CO LTD (KR)
International Classes:
C30B15/20; C30B15/10; C30B15/30; C30B29/36; C30B35/00
Foreign References:
| KR20150054486A | 2015-05-20 | |||
| JPH06183897A | 1994-07-05 | |||
| KR20120130125A | 2012-11-29 | |||
| KR101404519B1 | 2014-06-10 | |||
| KR20110088689A | 2011-08-04 | |||
| KR20110120617A | 2011-11-04 |
Attorney, Agent or Firm:
LEE, Jae Hwa (KR)
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