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Title:
GROWTH OF GROUP III-V MATERIAL LAYERS BY SPATIALLY CONFINED EPITAXY
Document Type and Number:
WIPO Patent Application WO/2011/106215
Kind Code:
A3
Abstract:
Techniques for crack- free growth of GaN, and related, films on larger- size substrates via spatially confined epitaxy are described.

Inventors:
SU JIE (US)
KRYLIOUK OLGA (US)
Application Number:
PCT/US2011/025063
Publication Date:
November 24, 2011
Filing Date:
February 16, 2011
Export Citation:
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Assignee:
APPLIED MATERIALS INC (US)
SU JIE (US)
KRYLIOUK OLGA (US)
International Classes:
H01L33/20; H01L21/20; H01L33/16
Foreign References:
US20040206299A12004-10-21
US20090174038A12009-07-09
US20040113166A12004-06-17
US20050064206A12005-03-24
US20050040407A12005-02-24
US20060118802A12006-06-08
Attorney, Agent or Firm:
VINCENT, Lester, J. et al. (Sokoloff Taylor & Zafman LLP,1279 Oakmead Parkwa, Sunnyvale CA, US)
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