Title:
GROWTH OF A UNIFORMLY DOPED SILICON INGOT BY DOPING ONLY THE INITIAL CHARGE
Document Type and Number:
WIPO Patent Application WO/2012/154551
Kind Code:
A3
Abstract:
The present invention relates to a method of growing a silicon ingot comprising a dopant material having a segregation coefficient of k, wherein the concentration of the dopant is axially substantially uniform throughout the ingot. The method comprises the steps of providing a crucible having an inner growth zone in fluid communication with an outer feed zone, and the inner growth zone and the outer feed zone have cross-sectional areas that are can be used to determine conditions for maintaining dopant uniformity for the specific dopant material used. A crystalline growth system for growing at least one uniformly doped silicon ingot is also disclosed.
Inventors:
JOHNSON BAYARD K (US)
Application Number:
PCT/US2012/036497
Publication Date:
March 21, 2013
Filing Date:
May 04, 2012
Export Citation:
Assignee:
GT ADVANCED CZ LLC (US)
JOHNSON BAYARD K (US)
JOHNSON BAYARD K (US)
International Classes:
C30B15/04; C30B29/06; H01L21/02
Foreign References:
| EP1722014A1 | 2006-11-15 | |||
| US5073229A | 1991-12-17 | |||
| US4894206A | 1990-01-16 |
Other References:
See also references of EP 2705178A4
Attorney, Agent or Firm:
LEBARRON, Stephen, D et al. (P.O. Box 55874Boston, MA, US)
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