Title:
HEAVILY DOPED PbSe WITH HIGH THERMOELECTRIC PERFORMANCE
Document Type and Number:
WIPO Patent Application WO/2012/058340
Kind Code:
A3
Abstract:
The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT > 1.3 was observed when n
Η
~ 1.0x 1020 cm-3. The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.
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Inventors:
SNYDER G JEFFREY (US)
WANG HENG (US)
PEI YANZHONG (US)
WANG HENG (US)
PEI YANZHONG (US)
Application Number:
PCT/US2011/057933
Publication Date:
July 12, 2012
Filing Date:
October 26, 2011
Export Citation:
Assignee:
CALIFORNIA INST OF TECHN (US)
SNYDER G JEFFREY (US)
WANG HENG (US)
PEI YANZHONG (US)
SNYDER G JEFFREY (US)
WANG HENG (US)
PEI YANZHONG (US)
International Classes:
H01L35/14; H01L35/16; H01L35/20; H01L35/34
Foreign References:
| JPH1022534A | 1998-01-23 | |||
| JPH0964422A | 1997-03-07 | |||
| US6444896B1 | 2002-09-03 | |||
| US20060102224A1 | 2006-05-18 |
Other References:
J. NURNUS ET AL.: "PbSe and PbTe expitaxial films alloyed with tin: Potential thin film materials with high ZT around room temperature?", 2005 INTERNA TIONAL CONFERENCE ON THERMOELECTRICS., June 2005 (2005-06-01), pages 68 - 71
Attorney, Agent or Firm:
LEVY, Seth, D. et al. (Suite 2400865 South Figueroa Stree, Los Angeles California, US)
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