Title:
HETERO Pn JUNCTION SEMICONDUCTOR AND PROCESS FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2010/098464
Kind Code:
A1
Abstract:
A hetero pn junction semiconductor characterized by comprising an electrically conductive polymer which is a p-type semiconductor and nanoparticles of an inorganic oxide which is an n-type semiconductor, the interstices among the nanoparticles being filled with the conductive polymer so as to satisfy equation (1). Vp/Vn=X×σn/σp (0.1≤X≤10) Vp = volume of the conductive polymer, a p-type semiconductor σp = electrical conductivity of the conductive polymer, a p-type semiconductor Vn = volume of the inorganic-oxide nanoparticles, an n-type semiconductor σn = electrical conductivity of the inorganic-oxide nanoparticles, an n-type semiconductor The hetero pn junction semiconductor is produced by mixing nanoparticles of the inorganic oxide with a monomer for the conductive polymer to disperse the nanoparticles in the monomer, irradiating the dispersion with light whereby the nanoparticles generate holes, and simultaneously applying a constant current while controlling current density and/or current application time, thereby polymerizing the monomer through photoelectrochemical reaction to form an electrically conductive polymer.
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Inventors:
KAWAKITA Jin (2-1 Sengen 1-chome, Tsukuba-sh, Ibaraki 47, 〒3050047, JP)
Application Number:
JP2010/053152
Publication Date:
September 02, 2010
Filing Date:
February 26, 2010
Export Citation:
Assignee:
NATIONAL INSTITUTE FOR MATERIALS SCIENCE (2-1 Sengen 1-chome, Tsukuba-shi Ibaraki, 47, 〒3050047, JP)
独立行政法人物質・材料研究機構 (〒47 茨城県つくば市千現一丁目２番地１ Ibaraki, 〒3050047, JP)
独立行政法人物質・材料研究機構 (〒47 茨城県つくば市千現一丁目２番地１ Ibaraki, 〒3050047, JP)
International Classes:
H01L31/04; H01B13/00; H01L29/861; H01L51/05
Attorney, Agent or Firm:
NISHIZAWA Toshio (Kudan-Horie Bldg. 6F, 3-14 Kudan-kita 4-chome, Chiyoda-k, Tokyo 73, 〒1020073, JP)
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