HAFNIUM SILICIDE TARGET AND METHOD FOR PREPARATION THEREOF

Title:

HAFNIUM SILICIDE TARGET AND METHOD FOR PREPARATION THEREOF

Document Type and Number:

WIPO Patent Application WO/2004/016825

Kind Code:

A1

Abstract:

A hafnium silicide target for forming a gate oxide film, characterized in that it has a composition of HfSi_0.82-0.98 and has an oxygen content of 500 to 10000 ppm; and a method for preparing the hafnium silicide target which comprises synthesizing a powder having a composition of HfSi_0.82-0.98, followed by pulverization into a powder of 100 mesh or less, and subjecting the resultant powder to a hot pressing or hot hydrostatic pressing (HIP) at 1700 to 2120°C under 150 to 2000 kgf/cm². The hafnium silicide target is suitable for forming a HfSiO film and a HfSiON film which can be used as a high dielectric gate insulating film having characteristics sufficient to be used in place of a SiO₂ film and a SiON film, respectively, exhibits excellent resistance to embrittlement, is reduced in the formation of particles, and can be prepared with no danger of explosion or the like.

Inventors:

IRUMATA SHUICHI (JP)
SUZUKI RYO (JP)

Application Number:

PCT/JP2003/008461

Publication Date:

February 26, 2004

Filing Date:

July 03, 2003

Export Citation:

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Assignee:

NIKKO MATERIALS CO LTD (JP)
IRUMATA SHUICHI (JP)
SUZUKI RYO (JP)

International Classes:

C23C14/34; H01L21/28; H01L29/51; (IPC1-7): C23C14/34; H01L29/78; H01L21/336

Domestic Patent References:

WO2001099176A1

2001-12-27

Foreign References:

US6291283B1	2001-09-18
EP0442752A1	1991-08-21

Other References:

See also references of EP 1528120A4
None

Attorney, Agent or Firm:

Ogoshi, Isamu (Toranomon 9 Mori Bldg. 3F 2-2, Atago 1-chom, Minato-ku Tokyo, JP)

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