Title:
HALF-BRIDGE POWER SEMICONDUCTOR MODULE, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/129097
Kind Code:
A1
Abstract:
A half-bridge power semiconductor module 1 having an insulating wiring substrate 15 provided with a positive-electrode wiring conductor 12H, a bridge wiring conductor 12B, and a negative-electrode wiring conductor 21L. The rear-surface electrodes of a high-side power semiconductor device 13HT and a low-side power semiconductor device 13LT are joined on the positive-electrode wiring conductor 12H and the bridge wiring conductor 12B. The front-surface electrodes of the high-side power semiconductor device 13HT and the low-side power semiconductor device 13LT are connected to the bridge wiring conductor 12B and the negative-electrode wiring conductor 21L via connection means 18BT, 18LT. The main current flowing through the positive-electrode wiring conductor 12H and the bridge wiring conductor, and the main current flowing through the connection means 18BT and 18LT, are related to each other as currents flowing close and parallel to each other in opposite directions.
Inventors:
TANIMOTO SATOSHI (JP)
Application Number:
PCT/JP2015/053941
Publication Date:
August 18, 2016
Filing Date:
February 13, 2015
Export Citation:
Assignee:
NISSAN ARC LTD (JP)
International Classes:
H01L25/07; H01L25/18
Foreign References:
| JP2005192328A | 2005-07-14 | |||
| JP2006313821A | 2006-11-16 | |||
| JP2002076256A | 2002-03-15 | |||
| JP2008306872A | 2008-12-18 |
Other References:
See also references of EP 3258491A4
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (JP)
Hidekazu Miyoshi (JP)
Hidekazu Miyoshi (JP)
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