Title:
HALL ELECTROMOTIVE FORCE CORRECTION DEVICE AND HALL ELECTROMOTIVE FORCE CORRECTION METHOD
Document Type and Number:
WIPO Patent Application WO/2014/002387
Kind Code:
A1
Abstract:
The present invention pertains to a Hall electromotive force correction device and Hall electromotive force correction method for highly accurately correcting the magnetic sensitivity of a Hall element by correcting the stress and correcting the temperature, while reducing an increase in layout surface area or increase in current consumed. A Hall resistance measurement unit (13) measures the Hall resistance value (VR) in two or more directions of conduction between a plurality of electrodes belonging to a Hall element (11). A Hall electromotive force measurement unit (14) measures the Hall electromotive force (VH) of the Hall element. A temperature measurement unit (15) measures the ambient temperature of the Hall element. A correction signal generation unit (20) corrects the Hall electromotive force on the basis of the Hall resistance value given by the Hall resistance measurement unit and the temperature output value (T) of the temperature measurement unit. A correction factor computation circuit (21) calculates a correction factor (K) from the Hall resistance value measured by the Hall resistance measurement unit and the temperature output value measured by the temperature measurement unit. The correction factor comprises a stress correction factor (Kσ) and a temperature correction factor (KT).
Inventors:
FUJITA TAISUKE (JP)
OKATAKE SHIGEKI (JP)
OKATAKE SHIGEKI (JP)
Application Number:
PCT/JP2013/003467
Publication Date:
January 03, 2014
Filing Date:
May 31, 2013
Export Citation:
Assignee:
ASAHI KASEI MICRODEVICES CORP (JP)
International Classes:
G01R33/07; H01L43/06
Foreign References:
| JP2003014788A | 2003-01-15 | |||
| JPS5742865A | 1982-03-10 | |||
| JP2008096213A | 2008-04-24 | |||
| US6362618B1 | 2002-03-26 | |||
| US6483301B2 | 2002-11-19 | |||
| US6906514B2 | 2005-06-14 | |||
| US7437260B2 | 2008-10-14 | |||
| US7302357B2 | 2007-11-27 | |||
| JP2008292182A | 2008-12-04 | |||
| JP2009139213A | 2009-06-25 |
Other References:
UDO AUSSERLECHNER; MARIO MOTZ; MICHAEL HOLLIBER, IEEE SENSORS JOURANAL, no. 11, November 2007 (2007-11-01)
B.HALG: "Piezo-Hall Coefficients of n-type Silicon", J. APPL. PHYS., vol. 64, 1988, pages 276 - 282
See also references of EP 2871488A4
B.HALG: "Piezo-Hall Coefficients of n-type Silicon", J. APPL. PHYS., vol. 64, 1988, pages 276 - 282
See also references of EP 2871488A4
Attorney, Agent or Firm:
MORI, Tetsuya et al. (JP)
Woods Tetsuya (JP)
Woods Tetsuya (JP)
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