Title:
HALL ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/129103
Kind Code:
A1
Abstract:
Provided is a Hall element having little variation in characteristics of a generated Hall voltage. The Hall element includes an n-type well (6) square in plan and provided on a p-type substrate (7), an insulating film (5) provided on the n-type well (6) except for the four corners of the Hall element (10), an n-type polysilicon film (8) provided on the insulating film (5), and n-type diffusion layers (1 to 4) provided on the n-type well (6) at the four corners of the Hall element (10). Since a depletion layer is produced at an upper part of the n-type well (6) under the insulating layer (5), Hall current flows under the depletion layer. Therefore, the Hall current is neither affected by stains, dust, or scratches that may exist on the surface of the semiconductor substrate, nor affected by the interface between an oxide film and the semiconductor.
Inventors:
EBIHARA MIKA (JP)
HIROSE YOSHITSUGU (JP)
HIROSE YOSHITSUGU (JP)
Application Number:
PCT/JP2013/053354
Publication Date:
September 06, 2013
Filing Date:
February 13, 2013
Export Citation:
Assignee:
SEIKO INSTR INC (JP)
International Classes:
H01L43/06
Foreign References:
| JP2004296469A | 2004-10-21 | |||
| JP2008008883A | 2008-01-17 | |||
| JP2006128400A | 2006-05-18 | |||
| JPH10270773A | 1998-10-09 | |||
| JP2010129930A | 2010-06-10 |
Attorney, Agent or Firm:
KUHARA, Kentaro et al. (JP)
Kentaro Kuhara (JP)
Kentaro Kuhara (JP)
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Claims: