Title:
HALOGENATED COPPER SEMICONDUCTOR BASED ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/095129
Kind Code:
A1
Abstract:
Disclosed is a high output and high speed electronic device having low cost and high productivity. This electronic device is a halogenated copper semiconductor based electronic device, comprising: a substrate; a halogenated copper channel layer; an insulating layer; a gate electrode; a first n+ halogenated copper layer; a drain electrode; a second n+ halogenated copper layer; and a source electrode. The halogenated copper (CuHa) channel layer is formed on the substrate. The insulating layer is formed on the halogenated copper channel layer. The gate electrode is formed on the insulating layer. The first n+ halogenated copper layer is formed on the halogenated copper channel layer so as to be located on one side of the gate electrode, and comprises an n-type impurity. The drain electrode is formed on the first n+ halogenated copper layer. The second n+ copper halide layer is formed on the halogenated copper channel layer so as to be located on the other side of the gate electrode, and comprises an n-type impurity. The source electrode is formed on the second n+ halogenated copper layer.
More Like This:
Inventors:
AHN DO YEOL (KR)
PARK SANG JOON (KR)
YANG SEUNG HYUN (KR)
SONG JIN DONG (KR)
PARK SANG JOON (KR)
YANG SEUNG HYUN (KR)
SONG JIN DONG (KR)
Application Number:
PCT/KR2016/013946
Publication Date:
June 08, 2017
Filing Date:
November 30, 2016
Export Citation:
Assignee:
PETALUX INC (KR)
International Classes:
H01L29/78; H01L29/10
Foreign References:
| JP2010530063A | 2010-09-02 | |||
| KR100844094B1 | 2008-07-04 | |||
| KR20070007967A | 2007-01-16 | |||
| KR101548901B1 | 2015-09-01 | |||
| US20110204483A1 | 2011-08-25 |
Other References:
See also references of EP 3385994A4
Attorney, Agent or Firm:
C.M. PATENT & LAW FIRM, LLP. (KR)
Download PDF: