Title:
HANDLE SUBSTRATE FOR COMPOSITE SUBSTRATE FOR SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2015/008694
Kind Code:
A1
Abstract:
A handle substrate (1) formed from a light-transmitting ceramic. In the handle substrate (1), a surface region (2A) on the bonding surface (1a) side has voids having a size of 0.5-3.0 µm in an average number density of 50 per mm2 or less. Inside the handle substrate (1) has been formed a region (3) that has voids having a size of 0.5-3.0 µm in an average number density of 100 per mm2 or greater. The light-transmitting ceramic has an average particle diameter of 5-60 µm.
More Like This:
WO/2020/040915 | HIGH DENSITY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION CHAMBER |
JP2004253634 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
WO/2021/026283 | MODIFIED STACKS FOR 3D NAND |
Inventors:
IWASAKI YASUNORI (JP)
IDE AKIYOSHI (JP)
MIYAZAWA SUGIO (JP)
IDE AKIYOSHI (JP)
MIYAZAWA SUGIO (JP)
Application Number:
PCT/JP2014/068473
Publication Date:
January 22, 2015
Filing Date:
July 10, 2014
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H01L21/02; C04B35/115
Domestic Patent References:
WO2010128666A1 | 2010-11-11 | |||
WO2010128666A1 | 2010-11-11 |
Foreign References:
JPH05160240A | 1993-06-25 | |||
JPH11156703A | 1999-06-15 | |||
JPH059064A | 1993-01-19 | |||
JPH08512432A | 1996-12-24 | |||
JP2003224042A | 2003-08-08 | |||
JP2010278341A | 2010-12-09 | |||
JPH05160240A | 1993-06-25 | |||
JP2008288556A | 2008-11-27 | |||
JP2009246320A | 2009-10-22 | |||
JP2009246321A | 2009-10-22 | |||
JP2009246323A | 2009-10-22 | |||
JP2009252755A | 2009-10-29 | |||
JPH1126339A | 1999-01-29 |
Other References:
See also references of EP 2916346A4
Attorney, Agent or Firm:
HOSODA Masutoshi et al. (JP)
Masunori Hosoda (JP)
Masunori Hosoda (JP)
Download PDF: