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Title:
HARD NITRIDE-CONTAINING SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2023/037810
Kind Code:
A1
Abstract:
Provided are: a hard nitride-containing sputtering target that can prevent the occurrence of arcing during sputtering, caused by inclusion of relatively course zirconia particles, and can suppress the generation of particles during film formation; and a production method therefor.　The hard nitride-containing sputtering target: comprises an alloy phase including Fe or Co and a non-magnetic phase including a hard nitride selected from AlN, BN, Cr2N, Si3N4, HfN, NbN, TaN, TiN, VN, or any combination of these; and is characterized by having a Zr impurities concentration, when measured as metallic Zr, that is restricted to no more than 1,000 ppm and a Vickers hardness Hv of 200–600 when measured under a 3 kgf load.

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Inventors:
YAMAMOTO TAKAMICHI (JP)
NISHIURA MASAHIRO (JP)
WATANABE YASUNOBU (JP)
Application Number:
PCT/JP2022/030289
Publication Date:
March 16, 2023
Filing Date:
August 08, 2022
Export Citation:
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Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
C23C14/34; G11B5/64; G11B5/851; H01F41/18
Domestic Patent References:
WO2014185266A12014-11-20
WO2018047978A12018-03-15
WO2016140113A12016-09-09
WO2008081841A12008-07-10
Foreign References:
JP2011208169A2011-10-20
JP2019073798A2019-05-16
JP2013194299A2013-09-30
Attorney, Agent or Firm:
YAMAMOTO, Osamu et al. (JP)
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