HEAT DISSIPATING COMPONENT FOR SEMICONDUCTOR ELEMENT

Title:

HEAT DISSIPATING COMPONENT FOR SEMICONDUCTOR ELEMENT

Document Type and Number:

WIPO Patent Application WO/2013/015158

Kind Code:

A1

Abstract:

Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume% of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 µm in film thickness, (2) an Ni layer 1-5 µm in film thickness, and (3) an Au layer 0.05-4 µm in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.

Inventors:

HIROTSURU HIDEKI (JP)
TSUKAMOTO HIDEO (JP)
ISHIHARA YOSUKE (JP)

Application Number:

PCT/JP2012/068130

Publication Date:

January 31, 2013

Filing Date:

July 17, 2012

Export Citation:

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Assignee:

DENKI KAGAKU KOGYO KK (JP)
HIROTSURU HIDEKI (JP)
TSUKAMOTO HIDEO (JP)
ISHIHARA YOSUKE (JP)

International Classes:

B22D18/02; H01L23/373; C22C26/00; C22C32/00; C22F1/00; C22F1/04

Domestic Patent References:

WO2010007922A1

2010-01-21

Foreign References:

JP2007247058A	2007-09-27
JP2008258511A	2008-10-23
JP2010103377A	2010-05-06
JP2003168771A	2003-06-13

Other References: