Title:
HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2019/146167
Kind Code:
A1
Abstract:
Light emitted from a light projection unit and to be used for measuring reflectance is reflected by a half mirror so as to impinge on the surface of a semiconductor wafer supported by a rotary support. The light that is emitted from the one light projection unit and then reflected at three different locations on the surface of the semiconductor wafer is received by three light receiving units. A reflectance calculation unit calculates the reflectance at each of the three reflection positions on the basis of the intensity of light emitted by the light projection unit and the intensity of the reflected light received by each of the three light receiving units, and the reflectance calculation unit further calculates the average value of the reflectance. Measuring reflectance at a plurality of positions allows accurate measurement of the reflectance of a semiconductor wafer with less pattern dependence.
Inventors:
UEDA AKITSUGU (JP)
AOYAMA TAKAYUKI (JP)
KITAZAWA TAKAHIRO (JP)
UENO TOMOHIRO (JP)
AOYAMA TAKAYUKI (JP)
KITAZAWA TAKAHIRO (JP)
UENO TOMOHIRO (JP)
Application Number:
PCT/JP2018/037382
Publication Date:
August 01, 2019
Filing Date:
October 05, 2018
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
G01N21/47; H01L21/26; G01N21/55; H01L21/683
Foreign References:
| JP2007081062A | 2007-03-29 | |||
| JP2001514441A | 2001-09-11 | |||
| JP2016058722A | 2016-04-21 | |||
| JPS60137027A | 1985-07-20 | |||
| JP2007013047A | 2007-01-18 | |||
| JP2009094301A | 2009-04-30 | |||
| JPH01124726A | 1989-05-17 | |||
| JPH0513355A | 1993-01-22 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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