HEAT TREATMENT APPARATUS AND SUBSTRATE MANUFACTURING METHOD

WIPO Patent Application WO/2006/030857

A1

A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction tube (42), at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.

SHIMADA TOMOHARU (JP)
MOROHASHI AKIRA (JP)
YAMAZAKI KEISHIN (JP)
YOKOZAWA KOJIRO (JP)

PCT/JP2005/017040

March 23, 2006

September 15, 2005

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HITACHI INT ELECTRIC INC (JP)
SHIMADA TOMOHARU (JP)
MOROHASHI AKIRA (JP)
YAMAZAKI KEISHIN (JP)
YOKOZAWA KOJIRO (JP)

H01L21/324; H01L21/22; H01L21/31

JPH05160042A	1993-06-25
JP2002299273A	2002-10-11
JPH10256245A	1998-09-25
JPH11102876A	1999-04-13
JPH0997767A	1997-04-08

PATENT RELATED CORPORATION IPS (Yokohama Creation Square 5-1, Sakaecho, Kanagawa-k, Yokohama-shi Kanagawa, JP)

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