Title:
HEMT EPITAXY STRUCTURE WITH MULTIPLE QUANTUM WELLS AND HIGH-RESISTANCE BUFFER LAYER, AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2019/144915
Kind Code:
A1
Abstract:
A high electron mobility transistor (HEMT) epitaxy structure having a high-resistance GaN-based buffer layer prepared by growing a p-i-n multi-quantum-well heterojunction, and a method therefor. By utilizing the great difference between spontaneous polarization strengths of AIN and GaN, by growing Al xGa l-xN with a gradually changing constituent, polarization and doping are realized to obtain a p-type and n-type Al xGa l-xN layer; and by growing an Al xGa l-xN layer with fixed constituents under a high-temperature, a p-i-n multi-quantum-well heterojunction is obtained; in the p-i-n heterojunction, due to the existence of a built-in electric field, an i layer is a fully depleted layer, so that a high-resistance GaN-based buffer layer with a low carrier concentration is obtained; a leakage current in the buffer layer can be reduced, and the crystal quality of an epitaxial material is also improved, so as to improve the high-voltage property of a device and reduce useless power consumption of the device, being applicable for actual production and application.
Inventors:
FANG YUTAO (CN)
LIU BOTING (CN)
YEH NIEN-TZE (CN)
ZHANG KAIXUAN (CN)
LIU BOTING (CN)
YEH NIEN-TZE (CN)
ZHANG KAIXUAN (CN)
Application Number:
PCT/CN2019/073026
Publication Date:
August 01, 2019
Filing Date:
January 24, 2019
Export Citation:
Assignee:
XIAMEN SANAN INTEGRATED CIRCUIT CO LTD (CN)
International Classes:
H01L29/06; H01L21/335; H01L29/778
Foreign References:
| CN108400159A | 2018-08-14 | |||
| CN103337460A | 2013-10-02 | |||
| CN101764152A | 2010-06-30 | |||
| CN103715605A | 2014-04-09 |
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