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Title:
HIGH DEFINITION HEATER AND METHOD OF OPERATION
Document Type and Number:
WIPO Patent Application WO/2013/033381
Kind Code:
A8
Abstract:
An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.

Inventors:
PTASIENSKI KEVIN (US)
SMITH KEVIN ROBERT (US)
SWANSON CAL THOMAS (US)
SCHMIDT PHILIP STEVEN (US)
NOSRATI MOHAMMAD (US)
LINDLEY JACOB (US)
BOLDT ALLEN NORMAN (US)
ZHANG SANHONG (US)
STEINHAUSER LOUIS P (US)
GRIMARD DENNIS STANLEY (US)
Application Number:
PCT/US2012/053117
Publication Date:
June 26, 2014
Filing Date:
August 30, 2012
Export Citation:
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Assignee:
WATLOW ELECTRIC MFG (US)
PTASIENSKI KEVIN (US)
SMITH KEVIN ROBERT (US)
SWANSON CAL THOMAS (US)
SCHMIDT PHILIP STEVEN (US)
NOSRATI MOHAMMAD (US)
LINDLEY JACOB (US)
BOLDT ALLEN NORMAN (US)
ZHANG SANHONG (US)
STEINHAUSER LOUIS P (US)
GRIMARD DENNIS STANLEY (US)
International Classes:
H05B1/02; H01L21/67; H05B3/26
Attorney, Agent or Firm:
BURRIS, Kelly, K. (524 South Main StreetSuite 20, Ann Arbor MI, US)
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