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Title:
HIGH-DENSITY P-DOPED QUANTUM DOT SOLAR CELL OBTAINED BY THE ACTIVE DOPING OF INP AND A PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2011/162433
Kind Code:
A1
Abstract:
The present invention relates to a production method for a semiconductor quantum dot sensitized type of solar cell, and, more specifically, the production method of the present invention comprises: a quantum dot forming step in which a semiconductor layer containing a group 4 element and InP is formed on a substrate and then the substrate on which the semiconductor layer has been formed is subjected to a heat treatment, thereby forming n-type semiconductor quantum dots constituting group-4-element quantum dots from which the In (indium) has been removed and which have been doped with P (phosphorus).

Inventors:
KIM, Kyung Joong (#301, Doryong Villa 383-32, Doryong-dong, Yuseong-gu, Daejeon 305-340, 305-340, KR)
김경중 (대전광역시 유성구 도룡동 383-32 도룡빌라 301호, 305-340 Daejeon, 305-340, KR)
HONG, Seung hui (#Na-B2, Shinsung Villa 258-693, Mia-dong, Gangbuk-gu, Seoul 142-100, 142-100, KR)
홍승휘 (서울특별시 강북구 미아동 258-693 신성빌라 나-B2, 142-100 Seoul, 142-100, KR)
Application Number:
KR2010/004307
Publication Date:
December 29, 2011
Filing Date:
July 02, 2010
Export Citation:
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Assignee:
KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE (1 Doryong-dong, Yuseong-gu, Daejeon 305-340, 305-340, KR)
한국표준과학연구원 (대전광역시 유성구 도룡동 1, 305-340 Daejeon, 305-340, KR)
KIM, Kyung Joong (#301, Doryong Villa 383-32, Doryong-dong, Yuseong-gu, Daejeon 305-340, 305-340, KR)
김경중 (대전광역시 유성구 도룡동 383-32 도룡빌라 301호, 305-340 Daejeon, 305-340, KR)
HONG, Seung hui (#Na-B2, Shinsung Villa 258-693, Mia-dong, Gangbuk-gu, Seoul 142-100, 142-100, KR)
International Classes:
H01L31/042
Attorney, Agent or Firm:
KWON, Oh-Sig et al. (4F Jooeunleaderstel, 921 Dunsan-dong Seo-gu, Daejeon 302-120, 302-120, KR)
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Claims: