Title:
HIGH-DENSITY THREE-DIMENSIONAL MULTILAYER MEMORY AND PREPARATION METHOD
Document Type and Number:
WIPO Patent Application WO/2023/273003
Kind Code:
A1
Abstract:
A high-density three-dimensional multilayer memory and a preparation method, which relate to preparation techniques for memories. The preparation method of the present invention comprises the following steps: 1) forming a base structure; 2) forming grooves in the base structure; and 3) providing a predetermined number of memory cell holes in a partition slot, an insulating medium being between adjacent memory cell holes, vertical electrodes being provided in the memory cell holes, and a storage medium layer being between the vertical electrodes and an interdigitated structure; and in step 3), before the storage medium is provided, the following step is comprised: doping and diffusing a first conductive medium located on an inner wall of the partition slot, so that the first conductive medium close to the inner wall of the partition slot forms a buffer region of low-doped semiconductor material. The preparation method of the present invention has a low process costs and a high yield.
Inventors:
PENG JACK ZEZHONG (US)
WANG KE (CN)
WANG KE (CN)
Application Number:
PCT/CN2021/122754
Publication Date:
January 05, 2023
Filing Date:
October 09, 2021
Export Citation:
Assignee:
CHENGDU PBM TECH LTD (CN)
International Classes:
H01L27/112; H01L21/8246
Foreign References:
| CN109545787A | 2019-03-29 | |||
| CN101615656A | 2009-12-30 | |||
| CN112992906A | 2021-06-18 | |||
| US20180097013A1 | 2018-04-05 | |||
| CN111799264A | 2020-10-20 | |||
| CN113035874A | 2021-06-25 | |||
| CN109686703A | 2019-04-26 |
Attorney, Agent or Firm:
CHENGDU HUIDI PATENT LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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