Title:
HIGH EFFICIENCY, LOW COST, CHARGE PUMP CIRCUIT
Document Type and Number:
WIPO Patent Application WO2005065138
Kind Code:
A3
Abstract:
The present invention features use of PMOS devices (22, 24, 26, 28, 30, 32) to realize switches of an integrated circuit charge pump (20), while maintaining a maximum voltage drop (lower than VDD) on each transistor. The charge pump is a symmetrical structure that includes a pumping capacitor (34, 36) connected to a pumping node (48, 50), a first PMOS device (22, 28) connected to an input node (IN, 42), a second PMOS device (24, 30) connected to an output node (OUT, 44), a third PMOS (26, 32) device electrically communicating with the first PMOS device, and an auxiliary capacitor (38, 40) connected to the first PMOS device.
Inventors:
DAGA JEAN-MICHEL
RACAPE EMMANUEL
RACAPE EMMANUEL
Application Number:
PCT/US2004/041287
Publication Date:
September 09, 2005
Filing Date:
December 09, 2004
Export Citation:
Assignee:
ATMEL CORP (US)
International Classes:
G05F1/10; G05F3/02; H02M3/07; H03K3/01; H03K17/04; (IPC1-7): G05F1/10; G05F3/02
Foreign References:
| US20020122324A1 | 2002-09-05 |
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