Title:
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2022/124868
Kind Code:
A1
Abstract:
Disclosed are a high electron mobility transistor and a method for manufacturing same. A method for manufacturing a high electron mobility transistor according to one embodiment disclosed herein comprises the steps of: forming a stacked structure in which a buffer layer, a channel layer, a barrier layer, an etch stop layer, a capping layer, a mask layer, and a patterned photoresist layer are sequentially stacked; etching regions other than the patterned photoresist layer in the stacked structure; forming each of a first regrowth layer and a second regrowth layer in the etched regions of the stacked structure through a selective regrowth technique; and forming each of a source electrode and a drain electrode on the upper surface of the second regrowth layer, and forming a gate electrode spaced apart from both the source electrode and the drain electrode.
Inventors:
KIM DAE HYUN (KR)
JO HYEON BHIN (KR)
YUN SEUNG WON (KR)
LEE IN GEUN (KR)
JO HYEON BHIN (KR)
YUN SEUNG WON (KR)
LEE IN GEUN (KR)
Application Number:
PCT/KR2021/018823
Publication Date:
June 16, 2022
Filing Date:
December 13, 2021
Export Citation:
Assignee:
KYUNGPOOK NAT UNIV IND ACADEMIC COOP FOUND (KR)
International Classes:
H01L29/66; H01L29/08; H01L29/10; H01L29/423
Domestic Patent References:
| WO2014003349A1 | 2014-01-03 |
Foreign References:
| KR102050012B1 | 2019-11-28 | |||
| KR20070032701A | 2007-03-22 | |||
| US20140001478A1 | 2014-01-02 | |||
| KR20140100692A | 2014-08-18 |
Attorney, Agent or Firm:
KANG, Il Shin et al. (KR)
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