HIGH-ELECTRON-MOBILITY TRANSISTOR AND PREPARATION METHOD THEREFOR

Title:

HIGH-ELECTRON-MOBILITY TRANSISTOR AND PREPARATION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2018/054377

Kind Code:

A1

Abstract:

A high-electron-mobility transistor and a preparation method therefor. The high-electron-mobility transistor comprises: a substrate (10); a semiconductor layer (20) provided on the substrate (10), the semiconductor layer (20) comprising a heterogeneous structure and two-dimensional electron gas being formed on a heterogeneous interface; a source electrode (30) and a drain electrode (40) provided on the semiconductor layer (20); a first dielectric layer (50) provided on the semiconductor layer (20) between the source electrode (30) and the drain electrode (40); a floating gate (60) located above the first dielectric layer (50); a second dielectric layer (70) covering the floating gate (60) and the first dielectric layer (50); and a control gate (80) provided on the second dielectric layer (70).

Inventors:

JIANG LINGLI (CN)
SHEN CHEN (CN)
YU HONGYU (CN)
LI TAO (CN)
JI DONGMEI (CN)

Application Number:

PCT/CN2017/103350

Publication Date:

March 29, 2018

Filing Date:

September 26, 2017

Export Citation:

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Assignee:

UNIV SOUTH SCIENCE & TECHNOLOGY CHINA (CN)
SUZHOU COGENDA ELECTRONICS CO LTD (CN)

International Classes:

H01L29/778; H01L21/335

Foreign References:

CN106158952A	2016-11-23
CN106158953A	2016-11-23
CN106158954A	2016-11-23
CN106298910A	2017-01-04
JP2015211103A	2015-11-24
CN101320751A	2008-12-10
US20100044751A1	2010-02-25
CN102130159A	2011-07-20