Title:
HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/109277
Kind Code:
A1
Abstract:
The present application discloses a high electron mobility transistor structure and a manufacturing method therefor and an application thereof. The high electron mobility transistor structure comprises an epitaxial structure, a source, a drain and a gate. The epitaxial structure comprises a first semiconductor layer and a second semiconductor layer, a carrier channel is formed between the first semiconductor layer and the second semiconductor layer, and the source and the drain are electrically connected by means pf the carrier channel. An overlap ratio of the orthographic projection of a gate foot of the gate on the first semiconductor layer and the orthographic projection of the second semiconductor layer on the first semiconductor layer is more than 80%. According to a GaN electronic device structure in the present application, there is no access area between the gate-source and the gate-drain, and the whole carrier channel is effectively regulated and controlled by the gate, so that a nonlinear effect induced due to resistance degradation of RGs can be eliminated on the basis of achieving speed saturation and reducing a knee-point voltage of the device.
Inventors:
ZHOU YU (CN)
SUN QIAN (CN)
LI QIAN (CN)
ZHANG XINKUN (CN)
LIU JIANXUN (CN)
ZHAN XIAONING (CN)
ZHONG YAOZONG (CN)
YANG HUI (CN)
SUN QIAN (CN)
LI QIAN (CN)
ZHANG XINKUN (CN)
LIU JIANXUN (CN)
ZHAN XIAONING (CN)
ZHONG YAOZONG (CN)
YANG HUI (CN)
Application Number:
PCT/CN2022/124581
Publication Date:
June 22, 2023
Filing Date:
October 11, 2022
Export Citation:
Assignee:
SUZHOU INST NANO TECH & NANO BIONICS SINANO CAS (CN)
International Classes:
H01L29/778; H01L21/335
Foreign References:
| CN102637726A | 2012-08-15 | |||
| CN102629624A | 2012-08-08 | |||
| JP2000208754A | 2000-07-28 | |||
| CN105470294A | 2016-04-06 | |||
| CN103887335A | 2014-06-25 | |||
| US20140091309A1 | 2014-04-03 |
Attorney, Agent or Firm:
NANJING LI&FENG INTELLECTUAL PROPERTY AGENCY(SPECIAL GENERAL PARTNERSHIP) (CN)
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