Title:
HIGH ETCH RESISTANCE SPIN-ON CARBON HARD MASK COMPOSITION AND PATTERNING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2018/070785
Kind Code:
A1
Abstract:
In order to provide a hard mask composition having high etch resistance useful in a semiconductor lithography process, the present invention provides: a spin-on hard mask composition comprising a dibenzo carbazole polymer; and a patterning method for forming a hard mask layer by conducting a process of coating the composition on a layer to be etched, through spin coating, and a bake process. The hard mask according to the present invention has effects of exhibiting high etch resistance to withstand a multi-etch process and excellent solubility and mechanical characteristics.
Inventors:
KIM GI HONG (KR)
LEE SU JIN (KR)
LEE SEUNG HYUN (KR)
LEE SEUNG HUN (KR)
LEE SU JIN (KR)
LEE SEUNG HYUN (KR)
LEE SEUNG HUN (KR)
Application Number:
PCT/KR2017/011211
Publication Date:
April 19, 2018
Filing Date:
October 12, 2017
Export Citation:
Assignee:
YOUNG CHANG CHEMICAL CO LTD (KR)
International Classes:
G03F7/004; G03F7/16
Domestic Patent References:
| WO2014038483A1 | 2014-03-13 |
Foreign References:
| KR20160112847A | 2016-09-28 | |||
| KR20140127691A | 2014-11-04 | |||
| KR20120038447A | 2012-04-23 | |||
| KR101777687B1 | 2017-09-12 |
Attorney, Agent or Firm:
HAEDAM IP GROUP (KR)
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