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Patent Searching and Data


Title:
HIGH FREQUENCY AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2018/154647
Kind Code:
A1
Abstract:
This high frequency amplifier is configured such that, when a potential difference V1 between a source terminal of an E-type FET (11) and a source terminal of a D-type FET (12) becomes larger than a threshold voltage Vth, a protection circuit (13) starts an operation of reducing the potential difference V1 so that the potential difference V1 becomes smaller than the threshold voltage Vth. Consequently, even in the cases where the signal to be amplified is an RF signal, the E-type FET (11) can be prevented from breaking.

Inventors:
KUWATA EIGO (JP)
YAMAGUCHI YUTARO (JP)
Application Number:
PCT/JP2017/006545
Publication Date:
August 30, 2018
Filing Date:
February 22, 2017
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03F1/22
Foreign References:
JP2013153027A2013-08-08
JP2008235347A2008-10-02
JP2006100645A2006-04-13
JP2012524412A2012-10-11
JP2015159530A2015-09-03
JP2015061265A2015-03-30
US20120056678A12012-03-08
Attorney, Agent or Firm:
TAZAWA, Hideaki et al. (JP)
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