Title:
HIGH-FREQUENCY AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2019/008730
Kind Code:
A1
Abstract:
The source electrode of a first transistor (6a), and the source electrode of a second transistor (6b) are connected to a first grounding point (14), the source electrode of the second transistor (6b), and the source electrode of a third transistor (6c) are connected to a second grounding point (17), and the source electrode of the third transistor (6c), and the source electrode of a fourth transistor (6d) are connected to a third grounding point (20).
More Like This:
| JP7207522 | power amplifier |
| JPS6392106 | HIGH FREQUENCY AMPLIFIER |
| WO/2017/034834 | GATE INDUCED DRAIN LEAKAGE REDUCTION |
Inventors:
KAMIOKA JUN (JP)
YAMANAKA KOJI (JP)
YAMANAKA KOJI (JP)
Application Number:
PCT/JP2017/024845
Publication Date:
January 10, 2019
Filing Date:
July 06, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03F3/189; H03F3/68
Foreign References:
| JPH11274866A | 1999-10-08 | |||
| JP2004281625A | 2004-10-07 | |||
| JP2008148099A | 2008-06-26 | |||
| JP2007251264A | 2007-09-27 | |||
| JP2006094557A | 2006-04-06 |
Attorney, Agent or Firm:
TAZAWA, Hideaki et al. (JP)
Download PDF: