Title:
HIGH FREQUENCY AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2021/215443
Kind Code:
A1
Abstract:
This high frequency amplifier comprises: a first transistor and a second transistor; a first drain pad connected to the first transistor and a second drain pad connected to the second transistor; a matching circuit pattern that includes a first transmission line connected to the first drain pad and a second transmission line connected to the second drain pad; a first wire and a second wire; and a wiring pattern that is connected to the first drain pad via the first transmission line and the first wire and that is connected to the second drain pad via the second transmission line and the second wire. The effective impedance of the second wire is greater than that of the first wire. The matching circuit pattern has an asymmetric outline. The electrical length of the second transmission line is shorter than that of the first transmission line.
Inventors:
KIMOTO YUJI (JP)
Application Number:
PCT/JP2021/016063
Publication Date:
October 28, 2021
Filing Date:
April 20, 2021
Export Citation:
Assignee:
SEDI INC (JP)
International Classes:
H03F1/26; H03F3/195; H03F3/50
Foreign References:
| JP2014222836A | 2014-11-27 | |||
| JP2018078487A | 2018-05-17 | |||
| JP2020036153A | 2020-03-05 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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