HIGH-FREQUENCY CIRCUIT DEVICE

WIPO Patent Application WO/2014/156223

A1

Provided is a high-frequency circuit device that can prevent the occurrence of stress concentration on a dielectric substrate when the temperature is elevated due to a difference between the coefficient of thermal expansion of the package of a high-frequency module and that of a metal member for waveguide connection, and that can extract a broad band high-frequency signal to the waveguide without impairing hermeticity and with low loss. This high-frequency circuit device (1) has, in a waveguide-microstrip line converter that can perform high-frequency communication, an aluminum chassis (201) and a metal or ceramic package (11) that constitutes a high-frequency module (10) that abuts the upper part of the chassis (201). A waveguide part is provided so as to pass through the chassis (201) and the bottom of the inside of the package (11). In order to maintain the hermeticity of the package (11), a dielectric substrate (14) is disposed so as to block the waveguide part (11a) of the package (11). The dielectric substrate (14) has a thickness such that the strength thereof is sufficient to prevent the dielectric substrate from being damaged by the stress caused by the difference between the coefficient of thermal expansion of the chassis (201) and that of the package (11).

YAMAMOTO YOHEI (JP)
HASE EIICHI (JP)
KASHIMA KENICHI (JP)
HARAMOTO RYOKI (JP)

PCT/JP2014/050610

October 02, 2014

January 16, 2014

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HITACHI INT ELECTRIC INC (JP)

H01P5/107; H01L23/02; H01L23/12; H01P1/08

JP2006507740A	2006-03-02
JPH06140815A	1994-05-20
JPH06268402A	1994-09-22

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