Title:
HIGH-FREQUENCY DEVICE USING MAGNETIC MULTI-LAYER FILM DOT
Document Type and Number:
WIPO Patent Application WO2007032149
Kind Code:
A9
Abstract:
There are provided various novel high-frequency devices using a magnetic multi-layer film dot. The magnetic multi-layer film dot (1) is realized by a high-frequency element formed by magnetic layers (3) and non-magnetic layers (5) alternately layered. Each of the magnetic layers (3) constituting the magnetic multi-layer dot (1) has a film thickness, shape, and magnetic characteristic capable of stably maintaining the parallel state in which the magnetic layers (3) are magnetized in a single magnetic domain and their magnetization directions are all identical and the anti-parallel state in which the magnetization directions of the magnetic layers (3) are alternately different. The resonance frequency of the parallel state when the magnetization directions of the magnetic layers (3) are all identical is different from the resonance frequency of the anti-parallel state when the magnetization directions of the magnetic layers (3) are alternately different. By changing the resonance frequency of the magnetic multi-layer film dot (1) by changing the magnetization state, it is possible to change the filter frequency of a filter.
Inventors:
NOZAKI YUKIO (JP)
MATSUYAMA KIMIHIDE (JP)
MATSUYAMA KIMIHIDE (JP)
Application Number:
PCT/JP2006/314663
Publication Date:
May 24, 2007
Filing Date:
July 25, 2006
Export Citation:
Assignee:
UNIV KYUSHU (JP)
NOZAKI YUKIO (JP)
MATSUYAMA KIMIHIDE (JP)
NOZAKI YUKIO (JP)
MATSUYAMA KIMIHIDE (JP)
International Classes:
H01P7/00; H01L21/8246; H01L27/105; H01L29/82; H01L43/08; H01P1/218
Download PDF: