HIGH FREQUENCY MODULE AND COMMUNICATION DEVICE

WIPO Patent Application WO/2022/113546

A1

This high frequency module (1) comprises: a first base material (71) made of a first semiconductor material; a second base material (72) which is made of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material, and at which a power amplification circuit (11) is formed; a third base material (73) at which a transmission filter circuit (61T and/or 62T) is formed; and a module substrate (90) having a main surface (90a) on which the first base material (71), the second base material (72) and the third base material (73) are arranged, wherein the first base material (71) is joined to the main surface (90a) through an electrode (717), the second base material (72) is arranged between the module substrate (90) and the first base material (71) in a cross-sectional view and is joined to the main surface (90a) through an electrode (724), and at least a part of the first base material (71) overlaps with at least a part of the second base material (72) and at least a part of the third base material (73) in a plan view.

UEJIMA TAKANORI (JP)
TAKEMATSU YUJI (JP)
YAMAGUCHI YUKIYA (JP)
YOSHIMI SHUNJI (JP)
ARAYASHIKI SATOSHI (JP)
SAMATA MITSUNORI (JP)
GOTO SATOSHI (JP)
SASAKI YUTAKA (JP)
AOIKE MASAYUKI (JP)

PCT/JP2021/037705

June 02, 2022

October 12, 2021

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MURATA MANUFACTURING CO (JP)

H04B1/38; H01L23/12; H01L25/065; H01L25/07; H01L25/18; H03H9/17; H03H9/25; H03H9/64; H03H9/70; H03H9/72

WO2020090557A1	2020-05-07
WO2020179541A1	2020-09-10

JP2002359327A	2002-12-13
JPH08335836A	1996-12-17

YOSHIKAWA, Shuichi et al. (JP)

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