Description

HIGH FREQUENCY MODULE AND MANUFACTURING

METHOD THEREOF

Technical Field

[1] The embodiment relates to a high frequency module and a manufacturing method thereof. Background Art

[2] Recently, wireless communication terminals, such as cell phones, PDAs (personal digital assistants), smart phones and DMB (digital multimedia broadcasting) terminals, have been fabricated in small sizes with multiple functions. Various parts provided in such terminals have also been fabricated in small sizes.

[3] Further, the demand for compact and lightweight portable terminal parts is increasing more and more in electronic product markets.

[4] In order to allow the parts to have compact sizes and lightweights, it is necessary to reduce the individual size of a part to be mounted. In addition, there are necessary SOC (system on chip) technology for providing a plurality of individual parts as one chip, and SIP (system in package) technology for providing a plurality of individual parts as a package. That is, research has been conducted in order to provide parts, such as passive devices, active devices, filters and chips, in a package. Disclosure of Invention Technical Problem

[5] The embodiment provides a high frequency module capable of inter-shielding chip parts interfering with each other on a module board, and a manufacturing method thereof.

[6] The embodiment provides a high frequency module having internal and external shield structures, and a manufacturing method thereof. Technical Solution

[7] The embodiment provides a high frequency module comprising: a module board comprising a plurality of signal processors; a resin member on module board; a plating layer on resin member; and an internal shielding part formed between the signal processors.

[8] The embodiment provides a high frequency module comprising: a module board; a first signal processor with a packaged chip part for processing a first signal on the module board; a second signal processor with a packaged chip part for processing a second signal on the module board; a third signal processor with a packaged chip part for switching a path of the first and second signals on the module board; and an

internal shileding part formed in at least one of boundary areas among the first signal processor, the second signal processor and the third signal processor.

[9] The embodiment provides the method for manufacturing the high frequency module comprising: arranging ground patterns among signal processing areas on a module board; mounting chip parts at the signal processing areas on the module board; forming a resin member on the module board; forming a shield groove on the ground patterns of the module board through the resin member; and forming a plating layer on the resin member and in the shield groove.

Advantageous Effects

[10] According to the embodiment as described above, chip parts interfering each other in a high frequency module are inter-shielded, so that interference between the chip parts can be minimized.

[11] According to the embodiment, a plating layer is formed in areas among chip parts and on the ground pattern of the edge of a module board, so that the electrical reliability of a high frequency module can be improved.

[12] According to the embodiment, chip part areas are inter- shielded from each other, so that intervals among the chip part areas can be reduced.

[13] According to the embodiment, a shield can is not used, so that the number of assembly parts can be reduced and the assembly process can be simplified.

[14] According to the embodiment, grounding is automatically achieved during a plating process of the plating layer, so that a ground structure can be simplified.

[15] According to the embodiment, a high frequency module can be fabricated in a small size and be integrated with high density. Brief Description of the Drawings

[16] FIG. 1 is a side sectional view showing a high frequency module according to an embodiment; and

[17] FIGS. 2 to 8 are views illustrating the manufacturing process of a high frequency module according to an embodiment. Best Mode for Carrying Out the Invention

[18] Hereinafter, a preferred embodiment will be described with reference to the accompanying drawings.

[19] FIG. 1 is a side sectional view showing the high frequency module according to the embodiment.

[20] Referring to FIG. 1, the high frequency module 100 comprises a module board 110, chip parts 121 and 123, passive devices 122 and 124, a resin member 130, a plating layer 140 and an internal shielding part 150. Such a high frequency module 100 is obtained by modularizing parts that process RF signals in various wireless commu-

nication apparatuses such as portable terminals.

[21] The module board 110 comprises a ceramic substrate using HTCC (high temperature co-fired ceramic) or LTCC (low temperature co-fired ceramic), a silicon substrate, an MCPCB (metal core PCB), a common PCB (printed circuit board) and the like. The embodiment is not limited thereto.

[22] An wiring patterns 111 to 115 designed in advance are formed on the module board

110. The wiring patterns 111 to 115 comprise routing patterns, line patterns, bonding patterns 112, patterns 111 for a bare die, patterns for connecting vias, first and second ground patterns 114 and 115 and the like. Bare-die-type chip parts 121 and 123 adhere on the patterns 111 for a bare die and are connected to the bonding patterns 112 through a wire 129. The passive devices 122 and 124 are soldered to the bonding patterns 112. Further, flip-type chip parts may also be mounted on the patterns 111 in a flip type.

[23] The first ground pattern 114 is formed at the edge of the module board 110, and at least one second ground pattern 115 is formed at the inner side of the module board 110. The first and second ground patterns 114 and 115 can be electrically connected to the patterns 111 for a bare die, or are electrically connected to the ground of a bottom layer through a via, a via hole 119 or a through hole.

[24] The module board 110 may be divided into a first signal processor 101, a second signal processor 102 and a third signal processor (not shown) according to the characteristics of signal processing. The first signal processor 101 processes a transmission signal, which is a first signal, and comprises the chip parts 121 and passive device 122 that process a transmitted high frequency signal. The second signal processor 102 processes a received signal, which is a second signal, and comprises the chip parts 123 and passive device 124 that process a received high frequency signal. The third signal processor switches a path of the first and second signals and comprises a high frequency switch such as a duplexer.

[25] The second ground patterns 115 can be arranged in a boundary area B2 between the first and second signal processors 101 and 102 and a boundary area between other signal processors, respectively.

[26] The resin member 130 is formed on the module board 110. The resin member 130 is molded by a predetermined position in order to protect the chip parts 121 and 123, the passive devices 122 and 124 arranged on the module board 110. Here, the resin member 130 is formed a height higher than that of the chip parts 121 and 123, the passive devices 122 and 124, or the wire 129. The resin member 130 can be prepared in the form of one of an epoxy molding compound, poly phenylene oxide, epoxy sheet molding and silicon.

[27] The plating layer 140 for electronic shielding is formed on the resin member 130.

The plating layer 140 is connected to the first and second ground patterns 114 and 115, so that harmful electromagnetic waves introduced into the chip parts 121 and 123 or emitted to the exterior can be blocked.

[28]

[29] The internal shileding part 150 is formed in the boundary area between the signal processors on the module board 110. For example, the internal shileding part 150 is formed between the first and second signal processors 101 and 102, and comprises the second ground pattern 115, a shield groove 132 and a ground connection terminal 141. The second ground pattern 115 is formed along the boundary area B2 between the first and second signal processors 101 and 102, and may have a bent shape if the situation requires.

[30] The shield groove 132 is formed in the resin member 130 on the second ground pattern 115 to partially expose the second ground pattern 115. The shield groove 132 may have a circular shape, a quadrangular shape or a rectangular shape. At least one shield groove 132 may be formed on the second ground pattern 115.

[31] The ground connection terminal 141 is a part of the plating layer 140 and is electrically connected to the second ground pattern 115 through the shield groove 132. Such a ground connection terminal 141 is prepared in the form of column or wall.

[32] The internal shileding part 150 is formed between the first and second signal processors 101 and 102 to prevent interference from being generated between the chip part 121 of the first signal processor 101 and the chip part 123 of the second signal processor 102. That is, the internal shileding part 150 prevents interference, which may be generated between the chip parts 121 and 123 of the first and second signal processors 101 and 102 packaged in the high frequency module 100.

[33] Further, the outer side 145 of the plating layer 140 is located at the outer side of the module board 110. The outer side end 143 of the plating layer 140 is electrically connected to the first ground pattern 114, so that electromagnetic waves can be prevented from being emitted to the exterior.

[34] As described above, the internal shileding part 150 is provided between the areas, in which signal interference is generated, according to the operational characteristics of the high frequency module 100, so that the areas do not interfere with each other. Further, the plating layer 140 for electronic shielding is electrically connected to the first and second ground patterns 114 and 115, so that EMI/EMC phenomenon can be prevented.

[35] FIGS. 2 to 8 are views illustrating the manufacturing process of the high frequency module according to the embodiment.

[36] FIG. 2 is a side sectional showing an example in which chip parts are arranged on the module board.

[37] Referring to FIG. 2, a tin copper layer is patterned on the module board 110, so that the wiring patterns 111 to 115 designed in advance are formed. The wiring patterns 111 to 115 comprise routing patterns, line patterns, bonding patterns 112, patterns 111 for a bare die, patterns for connecting vias, first and second ground patterns 114 and 115 and the like. The bare-die-type chip parts 121 and 123 adhere on the patterns 111 for a bare die and are electrically connected to the bonding patterns 112 through the wire 129. The passive devices 122 and 124 are soldered to the bonding patterns 112. Further, flip-type chip parts may also be mounted on the patterns 111 in a flip manner.

[38] The first ground pattern 114 is selectively arranged at the edge of the module board

110, and can be connected to the patterns 111 for a bare die. The second ground pattern 115 is arranged at the boundary part between the first and second signal processors 101 and 102. The first and second ground patterns 114 and 115 are electrically connected to the ground of a bottom layer through a via, a through hole or a via hole 119.

[39] FIG. 3 is a plan view schematically showing a state in which the chip parts and the ground patterns in FIG. 2 are arranged.

[40] Referring to FIG. 3, the second to fourth ground patterns 115 to 117 are arranged in areas among the signal processors 101 to 103, respectively. For convenience of description, the ground pattern arranged in the areas among the signal processors will be referred to as the second to fourth ground patterns.

[41] The second ground pattern 115 is arranged in the boundary area between the first and second signal processors 101 and 102, the third ground pattern 116 is arranged in the boundary area between the second and third signal processors 102 and 103, and the fourth ground pattern 117 is arranged in the boundary area between the first and third signal processors 101 and 103. The fifth ground pattern 118 is arranged at the outer side of the first signal processor 101. The ground patterns 115 to 118 can be prepared in the form of at least one pattern.

[42] The first signal processor 101 processes a transmitted signal and comprises parts such as a modulator, a phase locked loop, a power and gain amplifier, a transmission filter and a transmitter. The chip part 121 can be defined as a transmitter.

[43] The second signal processor 102 processes a received signal and comprises chip parts such as an LNA (low noise amplifier), a receive filter (Rx SAW filter), a frequency mixer, a demodulator, and a receiver. The chip part 123 can be prepared in the form of a receiver.

[44]

[45] The third signal processor 103 switches a path of a transmitted signal or a received signal and comprises chip parts such as at least one high frequency switch 125, i.e. a duplexer. Further, a baseband section may also be comprised in a specific area, and active devices, the passive devices 122 and 124 and the like may also be additionally

mounted at the processors 101 to 103. The embodiment is not limited thereto.

[46] The embodiment can comprise two signal processors 101 and 102 or more according to the operation characteristics of the high frequency module that processes a high frequency signal. The embodiment is not limited thereto.

[47] Here, chip parts, such as the receiver 123 and the transmitter 121 of the chip parts as described above, are bonded to the bonding patterns by using the wire after adhering to the patterns 111 for a bare die by using an adhesive. Further, bonding the parts, such as the passive devices 122 and 124, is achieved through surface mount technology by using solder, so that chip parts and the passive devices can be mounted on the module board 110.

[48] Further, the first ground pattern 114 formed at the edge of the module board 110 is patterned to overlap with an adjacent high frequency module, and is electrically connected to the ground through a via structure.

[49] FIG. 4 is a sectional view illustrating a state in which the resin member is formed on the module board.

[50] Referring to FIG. 4, the resin member 130 is formed on the module board 110. The resin member 130 is molded on the module board 110 to the extent that the resin member 130 exceeds the heights of the chip parts 121 and 123, the passive devices 122 and 124, or the wire 129, so that the resin member 130 protects the chip parts 121 and 123, the passive devices 122 and 124, or the wire 129.

[51] The resin member 130 can be formed using various methods such as a transfer molding method using epoxy molding compound, a method of molding an epoxy sheet through thermo-compression, a method of thermally curing exhausted liquid-phase molding material, or an injection molding method. In the case of using the transfer molding method, the resin member 130 can be formed in the areas comprising the chip parts, or over the whole area of the module board.

[52] FIG. 5 is a sectional view illustrating a state in which the shield groove is formed in the resin member.

[53] Referring to FIG. 5, the shield groove 132 on the second ground pattern 115 is formed in the surface of the resin member 130. The shield groove 132 can be formed in the surface of the second ground pattern 115 or can pass through the second ground pattern 115 by laser or a drill. Further, the shield groove 132 can comprise a circular or rectangular shape.

[54] In addition, a half groove 131 is formed in the module board 110 by performing half cutting relative to the module boundary area B 1 by the module size. The half groove 131 has a depth H formed by cutting the module boundary area Bl up to the top layer of the module board 110 or a certain layer below the top layer of the module board 110.

[55] FIG. 6 is a plan view schematically illustrating an example in which the shield grooves are formed in the resin member of the high frequency module.

[56] Referring to FIG. 6, the shield grooves 132 having a circular shape are formed on the second ground pattern 115 at regular intervals, a shield groove 133 having a rectangular shape is formed on the third ground pattern 116, shield grooves 134 having a circular shape are formed on the fourth ground pattern 117 at regular intervals, and shield grooves 135 having a circular shape are formed on the fifth ground pattern 118 at regular intervals. The each ground patterns 115, 116, 117 and 118 are exposed to the shield grooves 132, 133, 134 and 135. The interval among such shield grooves or the shape of such shield grooves can be varied according to the range of each ground pattern. The internal shielding part 150 can be formed through such shield grooves, respectively.

[57] Further, since the first ground pattern 114 is formed at the edge of the module board

110, the first ground pattern 114 is exposed to the half groove 131 in FIG. 5.

[58] Referring to FIG. 7, the plating layer 140 is formed on the resin member 130. The plating layer 140 is formed on the resin member 130 and is electically connected to the ground patterns 114 and 115 of the module board 110 through the shield groove 132 and the half groove 131.

[59] The plating layer 140 is formed on an exposed part of the module board 110 and the surface of the resin member 130. The plating layer 140 can be formed by selectively using a sputtering scheme, an evaporation scheme, electrolysis or non-electrolysis plating, and the like. Further, the plating layer 140 can comprise at least one metal layer in consideration of adhesive properties with the resin member 130 and rigidity of a plating member. For example, at least one plating layer can be stacked on the resin member 130 by using one or a mixture of conductive materials such as Cu, Ti, Ni and Au.

[60] The plating layer 140 formed on the surface of the resin member 130 is electrically connected to the second ground pattern 115 along the shield groove 132, so that the plating layer 140 is electrically grounded. Accordingly, the internal chip parts 121 and 123 can be electrically inter- shielded from each other, so EMI/EMC phenomenon can be prevented. Further, the plating layer 140 of FIG. 7 is formed in the shield grooves 132 to 135 as shown in FIG. 6, so that the ground connection terminal 141 of the plating layer 140 is electrically connected to the ground patterns 115 to 118.

[61] Thus, the high frequency module 100 can comprise a plurality of internal shileding part 150. That is, the first internal shileding part is arranged between the first signal processor and the second signal processor, the second internal shileding part is arranged between the second signal processor and the third signal processor, and the third internal shileding part is arranged between the first signal processor and the third

signal processor.

[62] Further, the plating layer 140 is formed in the half groove 131 and the first ground pattern 114 is electrically connected to the end 143 of the outer side 145 of the plating layer 140, so that the outer side of the high frequency module 100 is electrically inter- shielded.

[63] Then, full cutting is performed along the half groove 131 of FIG. 7 according to the size of a unit module, so that the fabrication of the high frequency module 100 is completed.

[64] In such an embodiment, after the second ground pattern 115 is formed in the boundary divided according to the characteristics of high frequency parts, the chip parts 121 and 123, the passive devices 122 and 124 are mounted on the module board 110, and the layer for protecting the parts by using the resin member 130 is formed.

[65] Further, the shield groove 132 on the second ground pattern 115 is formed in the resin member 130, and then the plating layer 140 for electronic shielding is formed over the surface of the module board 110 and the resin member 130, so that a part of the plating layer 140 is electrically grounded to the second ground pattern 115. Accordingly, harmful electromagnetic waves generated from the inside and/or outside of the high frequency module can be blocked without an additional assembly process.

[66] Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art. Industrial Applicability

[67] According to the embodiment as described above, the chip parts interfering each other in a high frequency module are inter- shielded, so that interference among the chip parts can be minimized.

[68] According to the embodiment, the plating layer is formed in the areas among the chip parts and on the ground pattern of the edge of the module board, so that the electrical reliability of the high frequency module can be improved.

[69] According to the embodiment, chip part areas are inter- shielded from each other, so that intervals among the chip part areas can be reduced.

[70] According to the embodiment, a shield cap is not used, so that the number of

assembly parts can be reduced and the assembly process can be simplified. [71] According to the embodiment, grounding is automatically achieved during a plating process of the plating layer, so that a ground structure can be simplified. [72] According to the embodiment, the high frequency module can be fabricated in a small size and be integrated with high density.