HIGH FREQUENCY POWER AMPLIFICATION DEVICE

WIPO Patent Application WO/2022/176947

A1

A high frequency power amplification device (200) comprises, on a first main surface (101) of a multilayer sub-mount substrate (100): a carrier amplification semiconductor device (11); a peak amplification semiconductor device (12); a bias power supply semiconductor device (13); a second high frequency signal line (2) for transmitting a high frequency signal to the carrier amplification semiconductor device (11) or the peak amplification semiconductor device (12); and a bias power supply line (31) for carrier amplification which is wired by means of a third wiring layer (105) to supply a bias power supply voltage. The second high frequency signal line (2) and the bias power supply line (31) for carrier amplification intersect each other in plan view. A second wiring layer (104) between a first wiring layer (103) and the third wiring layer (105) is provided with a shield pattern (121) at ground potential, and one or more connection-vias (131) disposed along an extending direction of the bias power supply line (31) for carrier amplification, wherein the one or more connection-vias (131) are connected to the shield pattern (121).

OHHASHI KAZUHIKO
KAMITANI MASATOSHI

PCT/JP2022/006393

August 25, 2022

February 17, 2022

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NUVOTON TECH CORPORATION JAPAN (JP)

H03F1/02; H03F1/26; H03F3/24

JP2004304628A	2004-10-28
JP2007135015A	2007-05-31
JP2013192178A	2013-09-26
JP2011250360A	2011-12-08
JPH06245174A	1994-09-02
JP2001313536A	2001-11-09
JP2016042695A	2016-03-31
JP2002164701A	2002-06-07
JPH09153701A	1997-06-10
JPH04150202A	1992-05-22
US20160373085A1	2016-12-22

NII, Hiromori et al. (JP)

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