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Patent Searching and Data


Title:
HIGH-FREQUENCY POWER AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2019/202631
Kind Code:
A1
Abstract:
The present invention relates to a high-frequency power amplifier in which mainly an amplification GaN chip and a GaAs chip on which a pre-match circuit for the amplification GaN chip is formed are connected by wires on the same metal plate. In the high-frequency power amplifier according to the present invention, a coupler exhibiting a depolarized mutual inductance is provided on the GaAs chip, thereby making it possible to: cancel the mutual inductance between adjacent wires; suppress the spread of the second harmonic impedance with respect to the frequency when the signal source is viewed from the gate terminal of the GaN chip; and maintain a high efficiency of the power amplifier in a desired fundamental band.

Inventors:
SASAKI, Yoshinobu (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
Application Number:
JP2018/015689
Publication Date:
October 24, 2019
Filing Date:
April 16, 2018
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORPORATION (7-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 10, 〒1008310, JP)
International Classes:
H03F3/185; H03F1/32
Domestic Patent References:
WO2018003111A12018-01-04
Foreign References:
JP2018056690A2018-04-05
JP2009135608A2009-06-18
JPH1056305A1998-02-24
JP2004523172A2004-07-29
US7939864B12011-05-10
JP2013118580A2013-06-13
Attorney, Agent or Firm:
MURAKAMI, Kanako et al. (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
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