Title:
HIGH-FREQUENCY POWER SOURCE DEVICE AND PLASMA PROCESSING DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2019/003345
Kind Code:
A1
Abstract:
[Problem] To provide a high-frequency power source device that enables device size to be decreased and the cost reduced thereby while also improving power efficiency by performing a stable matching operation, and to provide a plasma processing device using said device. [Solution] This high-frequency power source device comprises a plurality of high-frequency power sources 61, 64 and matching units 62, 65, the matching units 62, 65 being provided with only variable-capacity capacitors connected in parallel, thereby reducing the number of elements in terms of the variable-capacity capacitors. A matching calculation section for the high-frequency power sources 61, 64 determines, on the basis of traveling waves and reflection waves detected by a detection circuit, the capacity values of the variable-capacity capacitors for the matching units 62, 65, while adjusting and determining the oscillation frequencies for oscillation circuits in the high-frequency power sources 61, 64 so as to decrease the level of the reflection waves. The plasma processing device uses this high-frequency power source device.
Inventors:
OSHIDA YOSHIYUKI (JP)
FUJIMOTO NAOYA (JP)
KATO NORIKAZU (JP)
OKADA TAKESHI (JP)
TAKEDA TSUYOSHI (JP)
FUJIMOTO NAOYA (JP)
KATO NORIKAZU (JP)
OKADA TAKESHI (JP)
TAKEDA TSUYOSHI (JP)
Application Number:
PCT/JP2017/023767
Publication Date:
January 03, 2019
Filing Date:
June 28, 2017
Export Citation:
Assignee:
HITACHI INT ELECTRIC INC (JP)
International Classes:
H05H1/46
Foreign References:
| JP2013125729A | 2013-06-24 | |||
| JP2014072808A | 2014-04-21 | |||
| JPH06243992A | 1994-09-02 | |||
| JP2009206159A | 2009-09-10 | |||
| JP2016521430A | 2016-07-21 | |||
| JP2007163308A | 2007-06-28 |
Attorney, Agent or Firm:
FUNATSU, Nobuhiro (JP)
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